SMBT3906E6327 datasheet(1/12 Pages) INFINEON

部品番号	SMBT3906E6327

部品情報	PNP Silicon Switching Transistors

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メーカー	INFINEON [Infineon Technologies AG]

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2012-08-21

1

SMBT3906...MMBT3906

PNP Silicon Switching Transistors

• High DC current gain: 0.1 mA to 100 mA

• Low collector-emitter saturation voltage

• For SMBT3906S and SMBT3906U:

Two (galvanic) internal isolated transistor

with good matching in one package

• Complementary types:

SMBT3904...MMBT3904 (NPN)

• SMBT3906S/ U: for orientation in reel

see package information below

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

Type

Marking

Pin Configuration

Package

SMBT3906/ MMBT3906

SMBT3906S

SMBT3906U

s2A

1=B

1=E1

2=E

2=B1

3=C

3=C2

-

4=E2

-

5=B2

-

6=C1

SOT23

SOT363

SC74

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

VCEO

40

V

Collector-base voltage

VCBO

40

Emitter-base voltage

VEBO

6

Collector current

IC

200

mA

Total power dissipation-

TS ≤ 71°C, SOT23, MMBT3906

TS ≤ 115°C, SOT363, MMBT3906S

TS ≤ 107°C, SC74, MMBT3906U

Ptot

330

250

330

mW

Junction temperature

Tj

150

°C

Storage temperature

Tstg

-65 ... 150

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