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データシートサーチシステム |
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データシートサーチシステム |
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PN2484 データシート(PDF) 2 Page - Fairchild Semiconductor |
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PN2484 データシート(HTML) 2 Page - Fairchild Semiconductor |
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2 / 2 page  Electrical Characteristics TA = 25°C unless otherwise noted OFF CHARACTERISTICS Symbol Parameter Test Conditions Min Max Units ON CHARACTERISTICS SMALL SIGNAL CHARACTERISTICS *Pulse Test: Pulse Width ≤300µs, Duty Cycle ≤3.0% BVCBO Collector-Base Breakdown Voltage IC = 10 µA, I B = 0 60 V BVCEO Collector-Emitter Breakdown Voltage* IC = 10 mA, IE = 0 60 V BVEBO Emitter-Base Breakdown Voltage IC = 10 µA, I E = 0 5.0 V ICBO Collector Cutoff Current VCB = 45 V, IE = 0 VCB = 45 V, IE = 0, TA = 150 °C 10 10 nA µA IEBO Emitter Cutoff Current VEB = 5.0 V, IC = 0 10 nA Cobo Output Capacitance VCB =5.0 V, f = 140 kHz 6.0 pF Cibo Input Capacitance VEB = 0.5 V, f = 140 kHz 6.0 pF NF Noise Figure IC = 10 µA, V CE = 5.0 V, RS = 10k,f = 1.0 kHz,BW =200 Hz 3.0 dB hFE DC Current Gain IC = 1.0 mA, VCE = 5.0 V IC = 10 mA, VCE = 5.0 V* 250 800 VCE(sat) Collector-Emitter Saturation Voltage IC = 1.0 mA, IB = 0.1 mA 0.35 V VBE(on) Base-Emitter On Voltage IC = 1.0 mA, VCE = 5.0 V 0.95 V NPN General Purpose Amplifier (continued) |
同様の部品番号 - PN2484 |
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同様の説明 - PN2484 |
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