NVJD4401NT1G datasheet(2/5 Pages) ONSEMI

部品番号	NVJD4401NT1G

部品情報	Small Signal MOSFET 20 V, Dual N?묬hannel, SC??8 ESD Protection

Download	5 Pages

Scroll/Zoom	100%

メーカー	ONSEMI [ON Semiconductor]

ホームページ	http://www.onsemi.com

Logo

2 / 5 page

NTJD4401N, NVJD4401N

http://onsemi.com

2

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = 250 mA

20

27

V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

V(BR)DSS/TJ

22

mV/ °C

Zero Gate Voltage Drain Current

IDSS

VGS = 0 V, VDS = 16 V

1.0

mA

Gate−to−Source Leakage Current

IGSS

VDS = 0 V, VGS = ±12 V

10

mA

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250 mA

0.6

0.92

1.5

V

Gate Threshold Temperature

Coefficient

VGS(TH)/TJ

−2.1

mV/ °C

Drain−to−Source On Resistance

RDS(on)

VGS = 4.5 V, ID = 0.63 A

0.29

0.375

W

VGS = 2.5 V, ID = 0.40 A

0.36

0.445

Forward Transconductance

gFS

VDS = 4.0 V, ID = 0.63 A

2.0

S

CHARGES AND CAPACITANCES

Input Capacitance

CISS

VGS = 0 V, f = 1.0 MHz,

VDS = 20 V

33

46

pF

Output Capacitance

COSS

13

22

Reverse Transfer Capacitance

CRSS

2.8

5.0

Total Gate Charge

QG(TOT)

VGS = 4.5 V, VDS = 10 V,

ID = 0.63 A

1.3

3.0

nC

Threshold Gate Charge

QG(TH)

0.1

Gate−to−Source Charge

QGS

0.2

Gate−to−Drain Charge

QGD

0.4

SWITCHING CHARACTERISTICS (Note 3)

Turn−On Delay Time

td(ON)

VGS = 4.5 V, VDD = 10 V,

ID = 0.5 A, RG = 20 W

0.083

ms

Rise Time

tr

0.227

Turn−Off Delay Time

td(OFF)

0.786

Fall Time

tf

0.506

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

VSD

VGS = 0 V,

IS =0.23 A

TJ = 25°C

0.76

1.1

V

TJ = 125°C

0.63

Reverse Recovery Time

tRR

VGS = 0 V, dIS/dt = 100 A/ms,

IS = 0.63 A

0.410

ms

2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.

3. Switching characteristics are independent of operating junction temperatures.

同様の部品番号 - NVJD4401NT1G

メーカー	部品番号	データシート	部品情報
ON Semiconductor	NVJD4401NT1G	72Kb / 5P	Small Signal MOSFET May, 2015 ??Rev. 7

More results

同様の説明 - NVJD4401NT1G

メーカー	部品番号	データシート	部品情報
ON Semiconductor	NTJD4401N	66Kb / 5P	Small Signal MOSFET 20 V, Dual N-Channel, SC-88 ESD Protection November, 2006 ??Rev. 3
	NTJD4401N	86Kb / 5P	Small Signal MOSFET 20 V, Dual N-Channel, SC-88 ESD Protection January, 2008 - Rev. 4
	NTA4001N	61Kb / 6P	Small Signal MOSFET 20 V, 238 mA, Single, N?묬hannel, Gate ESD Protection, SC??5 September, 2003 ??Rev. 0
	NTA4153N	74Kb / 6P	Small Signal MOSFET 20 V, 915 mA, Single N?묬hannel with ESD Protection, SC??5 and SC??9 March, 2007 ??Rev. 5
	NTA7002N	56Kb / 6P	Small Signal MOSFET 30 V, 154 mA, Single, N?묬hannel, Gate ESD Protection, SC??5 July, 2005 ??Rev. 1
	NTZD3154N	139Kb / 5P	Small Signal MOSFET 20 V, 540 mA, Dual N?묬hannel March, 2006 ??Rev. 1
	NTJS4405N	131Kb / 5P	Small Signal MOSFET 25 V, 1.2 A, Single, N?묬hannel, SC??8 February, 2006 ??Rev. 4
	NTS4409N	65Kb / 6P	Small Signal MOSFET 25 V, 0.75 A, Single, N?묬hannel, ESD Protection, SC??0/SOT??23 January, 2006 ??Rev. 2
Leshan Radio Company	LNTS4409NWT1G	216Kb / 5P	Small Signal MOSFET 25 V, 0.75 A, Single, N?묬hannel, ESD Protection
First Silicon Co., Ltd	FTK4409	436Kb / 4P	Small Signal MOSFET 25 V, 0.75 A, Single, N?묬hannel, ESD Protection