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BTB04A データシート(PDF) 2 Page - Unisonic Technologies

部品番号 BTB04A
部品情報  SENSITIVE GATE TRIACS
PDF  3 Pages
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メーカー  UTC [Unisonic Technologies]
ホームページ  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

BTB04A データシート(HTML) 2 Page - Unisonic Technologies

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BTB04A
Preliminary
TRIACS
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R401-055.a
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
RMS On-State Current
(360° Conduction Angle)
TC=90°C
IT(RMS)
4
A
Non Repetitive Surge Peak On-State
Current (TJ initial=25°C)
tp=8.3ms
ITSM
42
A
tp=10ms
40
A
I
2t Value
tp=10ms
I
2t
8
A
2s
Critical Rate of Rise of On-State Current:
IG=50mA, dIG/dt=0.1A/µs
Repetitive F=50Hz
dI/dt
10
A/µs
Non Repetitive
50
A/µs
Repetitive Peak Off-State Voltage
(TJ=110°C)
400 T/D
VDRM/VRRM
400
V
600 T/S
600
V
Peak Gate Current
tp=20µs
IGM
4
A
Peak Positive Gate Voltage
tp=20µs
VGM
16
V
Peak Positive Gate Power Dissipation
tp=20µs
PGM)
40
W
Average Gate Power Dissipation
PG(AV)
1
W
Operating Junction Temperature
TJ
-40~+110
°C
Storage Junction Temperature
TSTG
-40~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL RESISTANCES
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
60
°C/W
Junction to Case for 360° Conduction Angle (F=50Hz) (AC)
θJC
2.4
°C/W
Junction to Case (DC)
3.2
°C/W
ELECTRICAL CHARACTERISTICS
FOR LOGIC LEVEL (3 QUADRANTS)
PARAMETER
SYMBOL
TEST CONDITIONS
SW
UNIT
MIN
TYP
MAX
Gate Trigger Current
IGT
VD=12V (DC)
RL=33Ω TJ=25°C
I-II-III
10
mA
Gate Trigger Voltage
VGT
I-II-III
1.5
V
Gate Non-Trigger Voltage
VGD
VD=VDRM, RL=3.3kΩ,
TJ=110°C
I-II-III
0.2
V
Time Gate Trigger
tGT
VD=VDRM, IG=40mA,
dIG/dt=0.5A/µs, TJ=25°C
I-II-III
2
µs
Holding Current
(Note 1)
IH
IT=100mA, Gate Open, TJ=25°C
25
mA
Latching Current
IL
IG=1.2IGT, TJ=25°C
I-III
20
mA
II
40
mA
Peak On-State Voltage
(Note 1)
VTM
ITM=5.5A, tp=380μs, TJ=25°C
1.65
V
Repetitive Peak Off-State Current
IDRM
VDRM Rated, TJ=25°C
0.01
mA
IRRM
VRRM Rated, TJ=110°C
0.75
mA
Critical Rate of Rise of Off-State
Voltage
(Note 1)
dV/dt
Linear Slope up to VD=67%VDRM,
Gate Open, TJ=110°C
10
V/µs
Critical Rate of Rise of Off-State
Voltage at Commutation (Note 1)
(dV/dt)c (dI/dt)c=1.8A/ms, TJ=110°C
5
V/µs
Note: 1. For either polarity of electrode MT2 voltage with reference to electrode MT1.


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