LM3448

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SNOSB51B – SEPTEMBER 2011 – REVISED NOVEMBER 2011

ELECTRICAL CHARACTERISTICS

(1) (continued)

reference purposes only.

Symbol

Parameter

Conditions

Units

SW - ISNS = 600V

1

µA

SW to ISNS switch on resistance

3.6

Ω

THERMAL SHUTDOWN

Thermal shutdown temperature

165

°C

Thermal shutdown hysteresis

20

THERMAL RESISTANCE

R

Junction to Ambient

95

°C/W

(4)

High voltage devices such as the LM3448 are susceptible to increased leakage currents when exposed to high humidity and high

pressure operating environments. Users of this device are cautioned to satisfy themselves as to the suitability of this product in the

intended end application and take any necessary precautions (e.g. system level HAST/HALT testing, conformal coating, potting, etc.) to

ensure proper device operation.

(5)

These electrical parameters are guaranteed by design and are not verified by test.

(6)

This R

resistance is highly board-layout dependent. In applications where high maximum power dissipation exists, special care must be paid to

thermal dissipation issues during board design. In high-power dissipation applications, the maximum ambient temperature may have to

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