2SK2975 datasheet(1/3 Pages) MITSUBISHI

部品番号	2SK2975

部品情報	RF POWER MOS FET(VHF/UHF power amplifiers)

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メーカー	MITSUBISHI [Mitsubishi Electric Semiconductor]

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2SK2975

MITSUBISHI RF POWER MOS FET

Nov. ´97

DESCRIPTION

2SK2975 is a MOS FET type transistor specifically designed for

VHF/UHF power amplifiers applications.

FEATURES

• High power gain:Gpe

≥8.4dB

@VDD=9.6V,f=450MHz,Pin=30dBm

• High efficiency:55% typ.

• Source case type seramic package

(connected internally to source)

APPLICATION

For drive stage and output stage of power amplifiers in VHF/UHF

band portable radio sets.

Typ

Max

Min

Limits

Parameter

Test conditions

Symbol

Parameter

Ratings

175

VDSS

VGSS

Pch

Tj

Tstg

Unit

Drain to source voltage

Gate to source voltage

Channel dissipation

Junction temperature

Storage temperature

30

±20

10

-40 to +110

V

W

˚C

ABSOLUTE MAXIMUM RATINGS (TC=25˚C, unless otherwise noted)

ELECTRICAL CHARACTERISTICS (TC=25˚C, unless otherwise noted)

Symbol

Unit

IDSS

IGSS

VTH

Ciss

Coss

hD

Pout

Threshold voltage

Note: Above parameters,ratings,limits and conditions are subject to change.

VDS=17V, VGS=0V

55

10

1

1.7

µA

V

%

1.0

Note1: Above parameters are guaranteed independently.

VGS=10V, VDS=0V

VDS=7V, IDS=1mA

VGS=10V, VDS=0V,f=1MHz

VDS=10V, VGS=0V,f=1MHz

VDS=9.6V, Pin=1W,f=450MHz

7

50

8

80

45

pF

W

Conditions

Tc=25˚C

(Note2)

˚C

2: Solder source pad on Copper Block(14

×2.8×2mm)

OUTLINE DRAWING

Dimensions in mm

1 : DRAIN

2 : SOURCE

3 : GATE

MARKING

2

3

3.50

1

t=1.2MAX

(BOTTOM)

(TOP)

4.9

INDEX MARK

2.0

LOT No.

TYPE No.

INDEX

MARK

同様の部品番号 - 2SK2975

メーカー	部品番号	データシート	部品情報
Toshiba Semiconductor	2SK2972	164Kb / 2P	HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS
Mitsubishi Electric Sem...	2SK2973	37Kb / 3P	RF POWER MOS FET
Mitsubishi Electric Sem...	2SK2974	29Kb / 3P	RF POWER MOS FET(VHF/UHF power amplifiers)
Sanyo Semicon Device	2SK2976	108Kb / 4P	DC-DC Converter Applications
Sanyo Semicon Device	2SK2977	42Kb / 4P	DC/DC Converter Applications

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同様の説明 - 2SK2975

メーカー	部品番号	データシート	部品情報
Mitsubishi Electric Sem...	2SK2974	29Kb / 3P	RF POWER MOS FET(VHF/UHF power amplifiers)
Mitsubishi Electric Sem...	RD06HVF1	381Kb / 8P	MOS FET type transistor specifically designed for VHF RF power amplifiers applications.
NXP Semiconductors	MHW2821-1	204Kb / 6P	UHF Silicon FET Power Amplifiers Rev 2
	CA901	236Kb / 4P	The RF Line VHF/UHF CATV Amplifiers
	CA901A	236Kb / 4P	The RF Line VHF/UHF CATV Amplifiers
Motorola, Inc	MHW607-1	81Kb / 6P	The RF Line VHF Power Amplifiers
Sanyo Semicon Device	2SK1739A	123Kb / 4P	RF POWER MOS FET for UHF TV BROADCAST TRANSMITTER
Hitachi Semiconductor	BB502M	65Kb / 13P	Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
	BB501C	71Kb / 13P	Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
	BB304M	68Kb / 12P	Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier