MMBT9018

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R206-032.E



PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

30

V

Collector-Emitter Voltage

15

V

Emitter-Base Voltage

5

V

Collector Current

50

mA

Collector Power Dissipation

SOT-23

225

mW

SOT-523

150

mW

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector-Base Breakdown Voltage

30

V

Collector-Emitter Breakdown Voltage

15

V

Emitter-Base Breakdown Voltage

5

V

Collector Cut-Off Current

50

nA

Collector-Emitter Saturation Voltage

0.5

V

DC Current Gain

28

100

198

Current Gain Bandwidth Product

700

1100

MHz

Output Capacitance

1.3

1.7

pF



RANK

D

E

F

G

H

I

J

RANGE

28-45

39-60

54-80

72-108

97-146

132-198

180-265