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データシートサーチシステム |
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UT108N03 データシート(PDF) 1 Page - Unisonic Technologies |
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UT108N03 データシート(HTML) 1 Page - Unisonic Technologies |
1 / 4 page ![]() UNISONIC TECHNOLOGIES CO., LTD UT108N03 Power MOSFET www.unisonic.com.tw 1 of 4 Copyright © 2014 Unisonic Technologies Co., Ltd QW-R502-197.I 30V, 108A N-CHANNEL POWER MOSFET DESCRIPTION As advanced N-channel level power MOSFET, the UT108N03 is produced using UTC’s advanced trench technology, which has been specially tailored to minimize the on-resistance and maintain low gate charge for superior switching performance. FEATURES * RDS(ON) < 5.3mΩ @VGS = 10 V, ID = 25 A * Low Capacitance * Optimized Gate Charge * Fast Switching Capability * Avalanche Energy Specified SYMBOL 1.Gate 3.Source 2.Drain TO-252 1 TO-252D 1 TO-220 1 TO-251 1 ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 UT108N03L-TA3-T UT108N03G-TA3-T TO-220 G D S Tube UT108N03L-TM3-T UT108N03G-TM3-T TO-251 G D S Tube UT108N03L-TN3-R UT108N03G-TN3-R TO-252 G D S Tape Reel UT108N03L-TND-R UT108N03G-TND-R TO-252D G D S Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source (1) R: Tape Reel, T: Tube (2) TA3: TO-220, TM3: TO-251, TN3: TO-252 TND: TO-252D (3) L: Lead Free, G: Halogen Free and Lead Free UT108N03L-TA3-T (1)Packing Type (2)Package Type (3)Green Package MARKING |
同様の部品番号 - UT108N03_15 |
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同様の説明 - UT108N03_15 |
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