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STM32F745VG データシート(PDF) 112 Page - STMicroelectronics |
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STM32F745VG データシート(HTML) 112 Page - STMicroelectronics |
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112 / 227 page ![]() Electrical characteristics STM32F745xx STM32F746xx 112/227 DocID027590 Rev 4 Table 33. Typical and maximum current consumptions in VBAT mode Symbol Parameter Conditions(1) Typ Max(2) Unit TA =25 °C TA =85 °C TA =105 °C VBAT = 1.7 V VBAT= 2.4 V VBAT= 3.3 V VBAT = 3.6 V IDD_VBAT Supply current in VBAT mode Backup SRAM OFF, RTC and LSE OFF 0.03 0.03 0.04 0.2 0.4 µA Backup SRAM ON, RTC and LSE OFF 0.74 0.75 0.78 3.0 7.0 Backup SRAM OFF, RTC ON and LSE in low drive mode 0.40 0.52 0.72 2.8 6.5 Backup SRAM OFF, RTC ON and LSE in medium low drive mode 0.40 0.52 0.72 2.8 6.5 Backup SRAM OFF, RTC ON and LSE in medium high drive mode 0.54 0.64 0.85 3.3 7.6 Backup SRAM OFF, RTC ON and LSE in high drive mode 0.62 0.73 0.94 3.6 8.4 Backup SRAM ON, RTC ON and LSE in low drive mode 1.06 1.18 1.41 5.4 12.7 Backup SRAM ON, RTC ON and LSE in Medium low drive mode 1.16 1.28 1.51 5.8 13.6 Backup SRAM ON, RTC ON and LSE in Medium high drive mode 1.18 1.3 1.54 5.9 13.8 Backup SRAM ON, RTC ON and LSE in High drive mode 1.36 1.48 1.73 6.7 15.5 1. Crystal used: Abracon ABS07-120-32.768 kHz-T with a CL of 6 pF for typical values. 2. Guaranteed by characterization results. |
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