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CMA-162LN データシート(PDF) 2 Page - Mini-Circuits |
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CMA-162LN データシート(HTML) 2 Page - Mini-Circuits |
2 / 6 page ![]() Ultra Low Noise, High IP3 Monolithic Amplifier Page 2 of 6 Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits® www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com simplified schematic and pad description Function Pad Number Description RF IN 3 Connects to RF input via C1 and Pad 2 via L1 RF-OUT 6 Connects to RF out via C2, Pad 8 via R1, and C3 RF-Ground 2 Connects to ground via C4 and Pad 3 via L1 Bias 1 Connects to Supply voltage (Vs) via Rbias Feedback 8 Connected to pads 6, 1 via R1 and C3 Ground 7 & paddle Connects to ground Not connected 4,5 Recommend connection to ground Product Features • Low Noise figure, 0.5 dB at 1 GHz • High IP3, 30 dBm typ. at 1 GHz • Adjustable gain, 19.7-23.5 dB at 1 GHz • High Pout, P1dB 20 dBm typ. at 1 GHz • Class 1B HBM ESD rating (500V) • Small size - 3mm x 3mm x 1.14mm • Ceramic, hermetic, Nitrogen filled • No external matching components required REV. B M155058 CMA-162LN+ BT/CP 160222 General Description The CMA-162LN+ amplifier is fabricated using E-PHEMT technology and offers extremely high dynamic range with ultra low noise figure and good input and output return loss. Terminal finish is Ni-Pd-Au and it has repeatable performance from lot to lot due to fully automated, tightly controlled semiconductor and assembly processes. Typical Applications • Base station infrastructure • Portable Wireless • LTE • GPS • GSM • Airborne radar 3 1 4,5,7 paddle RF-Out and DC-IN 8 6 RF-IN 2 RF-Ground Ground Bias Feedback CMA-162LN+ CASE STYLE: DL1721 +RoHS Compliant The +Suffix identifies RoHS Compliance. See our web site for RoHS Compliance methodologies and qualifications 1 4 3 2 8 5 6 7 GND Bias RF In NC Gnd NC RF Out, DC Top View RF Gnd Feed Back 0.7-1.6 GHz * Enhancement mode pseudomorphic High Electron Mobility Transistor. |
同様の部品番号 - CMA-162LN |
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同様の説明 - CMA-162LN |
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