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データシートサーチシステム |
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データシートサーチシステム |
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AN-1035 データシート(PDF) 7 Page - International Rectifier |
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AN-1035 データシート(HTML) 7 Page - International Rectifier |
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7 / 42 page  DirectFET ® Technology AN-1035 Board Mounting Application Note www.irf.com Version 28 (revision history), April 2016 Page 7 of 42 Figure 10 Heatsinks attached to substrates Figure 11 Heatsinks attached to devices Whichever heatsink design and application method is used, heatsinks can be applied to single or multiple devices. Figure 12 shows multiple device heatsinking. Figure 12 Heatsinks attached to multiple devices When one heatsink covers multiple devices, problems can arise from variances in the thermal expansion of substrate, solder, device, thermal interface material (TIM) and heatsink. This is especially true when the heatsink is attached to the top of the devices without mechanical fastenings to the substrate. As well as normal operating conditions, calculations of thermal expansion must include other heat excursions applied to the assembly (for example, during reflow soldering). TIMs should be used to improve thermal contact by filling air gaps (voids) between the mating faces of the device and the heatsink. Without a TIM (Figure 13), there is a significant proportion of voids over the area. With a TIM (Figure 14), there is full contact. Figure 13 Thermal contact (no TIM) K ≈0.024 W/(m•K) Figure 14 Thermal contact (TIM) K ≈0.5–10.0 W/(m•K) Many TIMs are available in various forms. The table below summarizes the advantages and disadvantages of each form, although individual examples may differ. The suitability of each form depends on the design and use of the assembly. Evaluations will be needed to establish the most suitable material for an application. When applying a TIM to the device-heatsink joint, it is important to consider the material and the way it is applied. If a fluid or flowable material is used, it must not be allowed to seal the sides of the device that are not in contact with the substrate. Such seals can trap air under the device, both around the die and between the device and substrate. If the assembly is then subjected to heating for any reason (whether in normal operation, further processing or burn-in testing), the trapped air will expand and may break either the device-die bond or the device-substrate joints. Although tests have shown that this generally happens only when a large heat excursion is applied to a large DirectFET body containing a small silicon die, it is still worthy of consideration. |
同様の部品番号 - AN-1035 |
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同様の説明 - AN-1035 |
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