UP04315 datasheet(1/4 Pages) PANASONIC

部品番号	UP04315

部品情報	Silicon NPN epitaxial planar type Silicon PNP epitaxial planar type

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メーカー	PANASONIC [Panasonic Semiconductor]

ホームページ	http://www.panasonic.com/industrial/

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Composite Transistors

1

Publication date: June 2003

SJJ00268BED

UP04315

Silicon NPN epitaxial planar type (Tr1)

Silicon PNP epitaxial planar type (Tr2)

For switching/digital circuits

■ Features

• Two elements incorporated into one package

(Transistors with built-in resistor)

• Reduction of the mounting area and assembly cost by one half

■ Basic Part Number

• UNR2215 + UNR2115

■ Absolute Maximum Ratings T

a = 25°C

Marking Symbol: CB

Internal Connection

Unit: mm

(0.30)

0.10±0.02

654

123

5˚

0.20

+0.05

–0.02

1.60±0.05

Display at No.1 lead

1.00±0.05

(0.50)(0.50)

4

Tr1

Tr2

5

6

1

3

2

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-base voltage (Emitter open)

VCBO

IC = 10 µA, IE = 050

V

Collector-emitter voltage (Base open)

VCEO

IC

= 2 mA, I

B

= 050

V

Collector-base cutoff current (Emitter open)

ICBO

VCB = 50 V, IE = 0

0.1

µA

Collector-emitter cutoff current (Base open)

ICEO

VCE = 50 V, IB = 0

0.5

µA

Emitter-base cutoff current (Collector open)

IEBO

VEB

= 6 V, I

C

= 0

0.01

mA

Forward current transfer ratio

hFE

VCE = 10 V, IC = 5 mA

160

460



Collector-emitter saturation voltage

VCE(sat)

IC = 10 mA, IB = 0.3 mA

0.25

V

Output voltage high level

VOH

VCC

= 5 V, V

B

= 0.5 V, R

L

= 1 kΩ

4.9

V

Output voltage low level

VOL

VCC = 5 V, VB = 2.5 V, RL = 1 kΩ

0.2

V

Input resistance

R1

−30%

10

+30%

k

Ω

Transition frequency

fT

VCB

= 10 V, I

E

= −2 mA, f = 200 MHz

150

MHz

■ Electrical Characteristics T

a

= 25°C ± 3°C

• Tr1

1: Emitter (Tr1)

4: Emitter (Tr2)

2: Base (Tr1)

5: Base (Tr2)

3: Collector (Tr2)

6: Collector (Tr1)

SSMini6-F1 Package

Parameter

Symbol

Rating

Unit

Tr1

Collector-base voltage

VCBO

50

V

(Emitter open)

Collector-emitter voltage

VCEO

50

V

(Base open)

Collector current

IC

100

mA

Tr2

Collector-base voltage

VCBO

−50

V

(Emitter open)

Collector-emitter voltage

VCEO

−50

V

(Base open)

Collector current

IC

−100

mA

Overall

Total power dissipation

PT

125

mW

Junction temperature

Tj

125

°C

Storage temperature

Tstg

−55 to +125

°C

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

同様の部品番号 - UP04315

メーカー	部品番号	データシート	部品情報
Panasonic Semiconductor	UP04312	106Kb / 4P	Silicon NPN epitaxial planar type (Tr1)
	UP04314	113Kb / 5P	Silicon NPN epitaxial planar type (Tr1) / Silicon PNP epitaxial planar type (Tr2)
	UP04316	108Kb / 4P	For switching & For digital circuits

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同様の説明 - UP04315

メーカー	部品番号	データシート	部品情報
Panasonic Semiconductor	UP04314	113Kb / 5P	Silicon NPN epitaxial planar type (Tr1) / Silicon PNP epitaxial planar type (Tr2)
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	DMG964010R	400Kb / 6P	Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2)
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