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データシートサーチシステム |
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MA2SD24 データシート(PDF) 1 Page - Panasonic Semiconductor |
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MA2SD24 データシート(HTML) 1 Page - Panasonic Semiconductor |
1 / 3 page ![]() Schottky Barrier Diodes (SBD) 1 Publication date: April 2004 SKH00028BED MA2SD24 Silicon epitaxial planar type For super high speed switching ■ Features • Forward current (Average) I F(AV) = 200 mA rectification is possible • Small reverse current I R ■ Absolute Maximum Ratings T a = 25°C Parameter Symbol Rating Unit Reverse voltage VR 20 V Repetitive peak reverse voltage VRRM 20 V Peak forward current IFM 300 mA Forward current (Average) IF(AV) 200 mA Non-repetitive peak forward IFSM 1A surge current * Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C Note) *: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive) Marking Symbol: 5L Parameter Symbol Conditions Min Typ Max Unit Forward voltage VF IF = 200 mA 0.50 0.58 V Reverse current IR VR = 10 V 0.1 1.0 µA Terminal capacitance Ct VR = 0 V, f = 1 MHz 25 pF Reverse recovery time * trr IF = IR = 100 mA 3 ns Irr = 10 mA, R L = 100 Ω ■ Electrical Characteristics T a = 25°C ± 3°C Bias Application Unit (N-50BU) 90% Pulse Generator (PG-10N) R s = 50 Ω Wave Form Analyzer (SAS-8130) R i = 50 Ω t p = 2 µs t r = 0.35 ns δ = 0.05 I F = 100 mA I R = 100 mA R L = 100 Ω 10% Input Pulse Output Pulse I rr = 10 mA t r t p t rr V R I F t t A 1: Anode 2: Cathode EIAJ: SC-79 SSMini2-F1 Package Unit: mm 0.80 +0.05 –0.03 0.60 +0.05 –0.03 0.12 +0.05 –0.02 0 +0 –0.05 0.30±0.05 0.01±0.01 1 2 5˚ Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 3. Absolute frequency of input and output is 250 MHz. 4. *: trr measurement circuit |
同様の部品番号 - MA2SD24 |
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同様の説明 - MA2SD24 |
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