MBT3904DW1T1 datasheet(6/8 Pages) ONSEMI

部品番号	MBT3904DW1T1

部品情報	Dual General Purpose Transistors

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メーカー	ONSEMI [ON Semiconductor]

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MBT3904DW1T1, MBT3904DW2T1

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6

TYPICAL STATIC CHARACTERISTICS

Figure 15. DC Current Gain

IC, COLLECTOR CURRENT (mA)

0.3

0.5

0.7

1.0

2.0

0.2

0.1

0.5

2.0

3.0

10

50

70

0.2

0.3

0.1

100

1.0

0.7

200

30

20

5.0

7.0

VCE = 1.0 V

TJ = +125°C

+25°C

−55 °C

Figure 16. Collector Saturation Region

IB, BASE CURRENT (mA)

0.4

0.6

0.8

1.0

0.2

0.1

0.5

2.0

3.0

10

0.2

0.3

0

1.0

0.7

5.0

7.0

IC = 1.0 mA

TJ = 25°C

0.07

0.05

0.03

0.02

0.01

10 mA

30 mA

100 mA

Figure 17. “ON” Voltages

IC, COLLECTOR CURRENT (mA)

0.4

0.6

0.8

1.0

1.2

0.2

Figure 18. Temperature Coefficients

IC, COLLECTOR CURRENT (mA)

1.0

2.0

5.0

10

20

50

0

100

−0.5

0

0.5

1.0

0

60

80

120

140

160

180

20

40

100

200

−1.0

−1.5

−2.0

200

TJ = 25°C

VBE(sat) @ IC/IB =10

VCE(sat) @ IC/IB =10

VBE @ VCE =1.0 V

+25°C TO +125°C

−55 °C TO +25°C

+25°C TO +125°C

−55 °C TO +25°C

qVC FOR VCE(sat)

qVB FOR VBE(sat)

同様の部品番号 - MBT3904DW1T1

メーカー	部品番号	データシート	部品情報
Leshan Radio Company	MBT3904DW1T1	422Kb / 10P	Dual General Purpose Transistors
E-Tech Electronics LTD	MBT3904DW1T1	720Kb / 10P	Dual General Purpose Transistors
ON Semiconductor	MBT3904DW1T1	105Kb / 7P	Dual General Purpose Transistors May, 2005 - Rev. 5
	MBT3904DW1T1G	105Kb / 7P	Dual General Purpose Transistors May, 2005 - Rev. 5
	MBT3904DW1T1G	137Kb / 8P	Dual General Purpose Transistors October, 2010 ??Rev. 7

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