IMX2 datasheet(1/4 Pages) JIANGSU

部品番号	IMX2

部品情報	DUAL TRANSISTOR (NPNNPN)

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メーカー	JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]

ホームページ	http://www.cj-elec.com/en/

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-23-6L Plastic-Encapsulate Transistors

IMX2

DUAL TRANSISTOR (NPN+NPN)

FEATURES

·

Low Cob ,Cob = 2.0 pF (Typ).

MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

60

V

VCEO

Collector-Emitter Voltage

50

V

VEBO

Emitter-Base Voltage

7

V

IC

Collector Current

0.15

A

PC

Collector Power Dissipation

0.3

W

RΘJA

Thermal Resistance From Junction To Ambient

417

℃/W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-55～+150

℃

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test condition

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC=50µA, IE=0

60

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=1mA, IB=0

50

V

Emitter-base breakdown voltage

V(BR)EBO

IE=50µA, IC=0

7

V

Collector cut-off current

ICBO

VCB=60V, IE=0

0.1

µA

Emitter cut-off current

IEBO

VEB=7V, IC=0

0.1

µA

DC current gain

hFE

VCE=6V, IC=1mA

180

390

Collector-emitter saturation voltage

VCE(sat)

IC=50mA, IB=5mA

0.4

V

Transition frequency

fT

VCE=12V,IC=2mA,f=100MHz

90

MHz

Collector output capacitance

Cob

VCB=12V, IE=0, f=1MHz

2.0

3.5

pF

SOT-23-6L

MARKING:

Equivalent Circuit

1

6

www.cj-elec.com

1

A-2,Apr,2016

同様の部品番号 - IMX2

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