UMX3N datasheet(1/4 Pages) JIANGSU

部品番号	UMX3N

部品情報	DUAL TRANSISTOR (NPNNPN)

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メーカー	JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]

ホームページ	http://www.cj-elec.com/en/

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-363 Plastic-Encapsulate Transistors

UMX3N

FEATURES

Two 2SC2412K chips in a package

MAKING: X3

MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

60

V

VCEO

Collector-Emitter Voltage

50

V

VEBO

Emitter-Base Voltage

7

V

IC

Collector Current -Continuous

150

mA

PC

Collector Power Dissipation

150

mW

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55-150

℃

ELECTRICAL CHARACTERISTICS(Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC=50μA,IE=0

60

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=1mA,IB=0

50

V

Emitter-base breakdown voltage

V(BR)EBO

IE=50μA,IC=0

7

V

Collector cut-off current

ICBO

VCB=60V,IE=0

0.1

μA

Emitter cut-off current

IEBO

VEB=7V,IC=0

0.1

μA

DC current gain

hFE

VCE=6V,IC=1mA

120

560

Collector-emitter saturation voltage

VCE(sat)

IC=50mA,IB=5mA

0.4

V

Transition frequency

fT

VCE=12V,IC=-2mA,f=100MHz

180

MHz

Collector output capacitance

Cob

VCB=12V,IE=0,f=1MHz

2.0

3.5

pF

JC T

SOT-363

DUAL TRANSISTOR (NPN+NPN)

www.cj-elec.com

1

E,Mar,2016

www.cj-elec.com

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