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TG-PM-0518-ETRX357USB データシート(PDF) 6 Page - Silicon Laboratories

部品番号 TG-PM-0518-ETRX357USB
部品情報  Telegesis??is a trademark of Silicon Laboratories Inc
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メーカー  SILABS [Silicon Laboratories]
ホームページ  http://www.silabs.com
Logo SILABS - Silicon Laboratories

TG-PM-0518-ETRX357USB データシート(HTML) 6 Page - Silicon Laboratories

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ETRX3USB
©2015 Silicon Labs
- 6 -
ETRX3USB Product Manual (r4)
4
Operating Conditions
Typical values at 5V 25°C.
Parameter
Min.
Typ.
Max.
Units
Condition
Supply Voltage, Vdd
4.5
5
5.5
V
Supply Current
ETRX3USB
561
mA
TX 8dBm
542
mA
TX 3dBm
541
mA
TX –43dBm
52.51
mA
RX
29.51,3
mA
SED, Power Mode 01
271,2
mA
SED, Power Mode 02
261,2
mA
SED, Power Mode 03
Operating ambient
temperature range
-20
25
85
°C
Table 2: Operating Conditions
The Winbond memory chip in the 8M variants draws extra current as shown in Table 3. Full details
of its power consumption can be found in the Winbond W25Q80DV datasheet.
Operation
Current
Units
Typ
Max
Standby
10
50
µA
Read 50MHz
7
15
mA
Write Status Register
20
25
mA
Page Program
20
25
mA
Sector/Block Erase
20
25
mA
Chip Erase
20
25
mA
Table 3: Flash memory current consumption
1 During USB suspend the current will drop by 25.6mA in all modes.
2 During USB suspend the current will drop by 25.6mA in all modes.
3 Please note that the power consumption in various power modes is firmware and usage dependent.


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