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TG-PM-0518-ETRX357USB データシート(PDF) 6 Page - Silicon Laboratories |
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TG-PM-0518-ETRX357USB データシート(HTML) 6 Page - Silicon Laboratories |
6 / 14 page ETRX3USB ©2015 Silicon Labs - 6 - ETRX3USB Product Manual (r4) 4 Operating Conditions Typical values at 5V 25°C. Parameter Min. Typ. Max. Units Condition Supply Voltage, Vdd 4.5 5 5.5 V Supply Current ETRX3USB 561 mA TX 8dBm 542 mA TX 3dBm 541 mA TX –43dBm 52.51 mA RX 29.51,3 mA SED, Power Mode 01 271,2 mA SED, Power Mode 02 261,2 mA SED, Power Mode 03 Operating ambient temperature range -20 25 85 °C Table 2: Operating Conditions The Winbond memory chip in the 8M variants draws extra current as shown in Table 3. Full details of its power consumption can be found in the Winbond W25Q80DV datasheet. Operation Current Units Typ Max Standby 10 50 µA Read 50MHz 7 15 mA Write Status Register 20 25 mA Page Program 20 25 mA Sector/Block Erase 20 25 mA Chip Erase 20 25 mA Table 3: Flash memory current consumption 1 During USB suspend the current will drop by 25.6mA in all modes. 2 During USB suspend the current will drop by 25.6mA in all modes. 3 Please note that the power consumption in various power modes is firmware and usage dependent. |
同様の部品番号 - TG-PM-0518-ETRX357USB |
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同様の説明 - TG-PM-0518-ETRX357USB |
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