VO4254, VO4256

www.vishay.com

Vishay Semiconductors

Rev. 1.7, 13-Apr-12

2

Document Number: 84798

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Notes

• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not

implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute

maximum ratings for extended periods of the time can adversely affect reliability.

hole devices (DIP).

Fig. 1 - Recommended Operating Condition

PARAMETER

TEST CONDITION

PART

SYMBOL

VALUE

UNIT

INPUT

Reverse voltage

6V

Forward current

60

mA

Power dissipation

100

mW

Derate from 25 °C

1.33

mW/°C

OUTPUT

Peak off-state voltage

VO4254D/H/M

400

V

VO4256D/H/M

600

V

RMS on-state current

300

mA

Power dissipation

500

mW

Derate from 25 °C

6.6

mW/°C

COUPLER

Isolation test voltage (between

emitter and detector, climate per

DIN 500414, part 2, Nov. 74)

t = 1 s

5300

Storage temperature range

- 55 to + 150

°C

Ambient temperature range

- 55 to + 100

°C

max.

 10 s dip soldering

 0.5 mm from case bottom

260

°C

0

50

100

150

200

250

300

350

- 40

- 20

0

20

40

60

80

100

I

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