AM110N06-08FP datasheet(1/5 Pages) ANALOGPOWER

部品番号	AM110N06-08FP

部品情報	N-Channel 60-V (D-S) MOSFET

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メーカー	ANALOGPOWER [Analog Power]

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Analog Power

AM110N06-08FP

N-Channel 60-V (D-S) MOSFET

VDS (V)

ID (A)

Symbol

Limit

Units

VDS

60

VGS

±20

Continuous Drain Current

a

TC=25°C

ID

110

IDM

520

TC=25°C

IS

110

A

Power Dissipation

a

TC=25°C

PD

500

W

TJ, Tstg

-55 to 175

°C

Symbol

Maximum

Units

RθJA

40

RθJC

0.29

Notes

a.

Package Limited

b.

Pulse width limited by maximum junction temperature

c.

Surface Mounted on 1” x 1” FR4 Board.

PRODUCT SUMMARY

60

rDS(on) (mΩ)

8.5 @ VGS = 10V

11 @ VGS = 4.5V

Pulsed Drain Current

b

THERMAL RESISTANCE RATINGS

°C/W

Parameter

Operating Junction and Storage Temperature Range

ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)

V

Parameter

Drain-Source Voltage

A

Maximum Junction-to-Ambient

c

Maximum Junction-to-Case

Continuous Source Current (Diode Conduction)

a

110

a

Gate-Source Voltage

Key Features:

• Low rDS(on) trench technology

• Low thermal impedance

• Fast switching speed

Typical Applications:

• Automotive Systems

• DC/DC Conversion Circuits

• Battery Powered Power Tools

1

Publication Order Number:

DS_AM110N06-08FP_1A

同様の部品番号 - AM110N06-08FP

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Analog Power	AM110N06-08P	338Kb / 5P	N-Channel 60-V (D-S) MOSFET
SHENZHEN DOINGTER SEMIC...	AM110N06-08P	1Mb / 4P	N-Channel MOSFET uses advanced trench technology

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