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AM2362N データシート(PDF) 1 Page - Analog Power |
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AM2362N データシート(HTML) 1 Page - Analog Power |
1 / 5 page ![]() Analog Power AM2362N N-Channel 60-V (D-S) MOSFET VDS (V) ID (A) 5.7 5.2 Symbol Limit Units VDS 60 VGS ±20 TA=25°C 5.7 TA=70°C 4.5 IDM 25 IS 2.1 A TA=25°C 1.3 TA=70°C 0.8 TJ, Tstg -55 to 150 °C Symbol Maximum Units 100 166 Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Pulsed Drain Current b Continuous Source Current (Diode Conduction) a THERMAL RESISTANCE RATINGS °C/W Parameter Operating Junction and Storage Temperature Range ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) V Parameter Drain-Source Voltage Maximum Junction-to-Ambient a Power Dissipation a Gate-Source Voltage PRODUCT SUMMARY 60 rDS(on) (mΩ) 27 @ VGS = 10V 33 @ VGS = 4.5V t <= 10 sec Steady State RθJA ID A PD W Continuous Drain Current a Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • DC/DC Conversion Circuits • Motor Drives SOT-23 © Preliminary 1 Publication Order Number: DS_AM2362N_1A |
同様の部品番号 - AM2362N |
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同様の説明 - AM2362N |
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