Schottky Barrier Diodes (SBD)

1

Publication date: August 2001

SKH00001AED

Silicon epitaxial planar type

For wave detection

For super high speed switching

I Features

• Low forward voltage V

• Small temperature coefficient of forward characteristic

• Small reverse current I

R

• High-density mounting (5 mm pitch insertion) is possible

• DO-34-A1(DHD) package

I Absolute Maximum Ratings T

Parameter

Symbol

Rating

Unit

Reverse voltage (DC) MA2C700

15

V

MA2C700A

30

Peak reverse voltage MA2C700

15

V

MA2C700A

30

Peak forward current

150

mA

Forward current (DC)

30

mA

Junction temperature

125

°C

Storage temperature

−55 to +125

°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Reverse current (DC) MA2C700

100

nA

MA2C700A

= 30 V

150

Forward voltage (DC)

= 1 mA

0.4

V

1

Terminal capacitance

= 1 V, f = 1 MHz

1.3

pF

= I

R

= 10 mA

1

ns

Detection efficiency

η

= 3 V

= 30 MHz

60

%

I Electrical Characteristics T

Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body

and the leakage of current from the operating equipment.

 

2. Rated input/output frequency: 2 GHz

Bias Application Unit N-50BU

90%

Pulse Generator

(PG-10N)

R

Wave Form Analyzer

(SAS-8130)

R

t

t

δ = 0.05

I

I

R

10%

Input Pulse

Output Pulse

I

t

r

t

p

t

rr

V

R

I

F

t

t

A

Type No.

MA2C700 MA2C700A

Color

1st Band

Silver

Silver

2nd Band



Green

I Cathode Mark

1 : Cathode

2 : Anode

DO-34-A1

Unit: mm

1st Band

2nd Band

0.2 max.

13.0 min.

13.0 min.

Cathode

Anode

Note) The part number in the parenthesis shows conventional part number.