STU666S datasheet(2/10 Pages) SAMHOP

部品番号	STU666S

部品情報	N-Channel Logic Level Enhancement Mode Field Effect Transistor

PDF	10 Pages

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メーカー	SAMHOP [SamHop Microelectronics Corp.]

ホームページ	http://www.samhop.com.tw

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2 / 10 page

Symbol

Min

Typ

Max

Units

BVDSS

60

V

1

IGSS

±100

nA

VGS(th)

V

gFS

S

CISS

494

pF

COSS

41

pF

CRSS

30

pF

10.3

10.7

19

8.4

tD(ON)

ns

tr

ns

tD(OFF)

ns

tf

ns

VDS=25V,VGS=0V

SWITCHING CHARACTERISTICS

VDD=30V

ID=1A

VGS=10V

RGEN= 6 ohm

Rise Time

Turn-Off Delay Time

Fall Time

Turn-On Delay Time

VDS=10V , ID=3A

Input Capacitance

Output Capacitance

DYNAMIC CHARACTERISTICS

Forward Transconductance

IDSS

uA

Gate Threshold Voltage

VDS=VGS , ID=250uA

VDS=48V , VGS=0V

VGS= ±20V , VDS=0V

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)

OFF CHARACTERISTICS

Parameter

Conditions

Drain-Source Breakdown Voltage

VGS=0V , ID=250uA

Reverse Transfer Capacitance

ON CHARACTERISTICS

c

f=1.0MHz

c

www.samhop.com.tw

2

VSD

nC

Qgs

nC

Qgd

1.1

2.1

Gate-Drain Charge

Gate-Source Charge

Diode Forward Voltage

VDS=30V,ID=3A,

VGS=10V

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

VGS=0V,IS=2A

0.82

1.3

V

1

1.7

3

15

Jul,15,2013

Ver 1.0

STU666S

STD666S

81

m ohm

VGS=10V , ID=3A

RDS(ON)

Drain-Source On-State Resistance

101

93

m ohm

VGS=4.5V , ID=2.7A

126

Qg

nC

7.2

Total Gate Charge

VDS=30V,ID=3A,VGS=10V

nC

VDS=30V,ID=3A,VGS=4.5V

3.8

Notes

_

a.Surface Mounted on FR4 Board,t < 10sec.

b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.

c.Guaranteed by design, not subject to production testing.

d.Starting TJ=25°C,L=0.5mH,VDD = 30V.(See Figure13)

e.Drain current limited by maximum junction temperature.

_

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