| メーカー | 部品番号 | データシート | 部品情報 |
Sanyo Semicon Device |
2SJ256
|
82Kb/3P
|
Very High-Speed Switching Applications
|
Inchange Semiconductor ... |
2SJ256
|
58Kb/2P
|
Low Drain-Source ON Resistance
|
Sanyo Semicon Device |
2SJ256
|
95Kb/4P
|
Ultrahigh-Speed Switching Applications
|
| Search Partnumber :
Start with "2SJ256" -
Total : 106 ( 1/6 Page) |
Sanyo Semicon Device |
2SJ256
|
95Kb/4P |
Ultrahigh-Speed Switching Applications
|
|
2SJ254
|
81Kb/3P |
Very High-Speed Switching Applications
|
|
2SJ255
|
81Kb/3P |
Very High-Speed Switching Applications
|
|
2SJ257
|
88Kb/3P |
Very High-Speed Switching Applications
|
|
2SJ258
|
83Kb/3P |
Very High-Speed Switching Applications
|
|
2SJ259
|
89Kb/3P |
Very High-Speed Switching Applications
|
Toshiba Semiconductor |
2SJ200
|
181Kb/3P |
P CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATION)
|
|
2SJ200
|
426Kb/5P |
High Power Amplifier Application
|
|
2SJ200
|
297Kb/5P |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
|
2SJ200
|
1Mb/73P |
Bipolar Small-Signal Transistors
|
Inchange Semiconductor ... |
2SJ200
|
313Kb/2P |
isc P-Channel MOSFET Transistor
|
Toshiba Semiconductor |
2SJ200-Y
|
297Kb/5P |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
|
2SJ200
|
426Kb/5P |
High Power Amplifier Application
|
|
2SJ201
|
182Kb/3P |
P CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATIONS)
|
|
2SJ201
|
448Kb/5P |
High-Power Amplifier Application
|
|
2SJ201
|
275Kb/5P |
High-Power Amplifier Application
|
|
2SJ201
|
269Kb/5P |
High-Power Amplifier Application
|
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