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  • M3H67FCG-R

  • AI
    The **M3H67FCG-R** is a high-performance N-Channel enhancement mode MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by **MagnaChip**. It is primarily designed for high-efficiency power management applications. --- ### ## Technical Specifications Below are the primary electrical characteristics and physical parameters of the M3H67FCG-R: | Parameter | Specification | Description | | :--- | :--- | :--- | | **Drain-Source Voltage ($V_{DSS}$)** | 30V | Maximum voltage the device can handle. | | **Continuous Drain Current ($I_D$)** | ~60A to 80A | Rated current at $T_C = 25^\circ C$. | | **RDS(on) (Max)** | ~1.5m$\Omega$ to 2.5m$\Omega$ | Resistance when the gate is fully turned on (very low). | | **Gate-Source Voltage ($V_{GS}$)** | $\pm$20V | Voltage range to control the gate. | | **Package Type** | PDFN33 / PowerDFN | Small footprint, high thermal efficiency package. | | **Total Gate Charge ($Q_g$)** | ~30nC to 50nC | Total charge required to switch the transistor. | --- ### ## Internal Component Structure The device utilizes advanced trench technology to achieve high cell density. This provides: 1. **Low $R_{DS(on)}$:** Minimizes conduction losses during the "ON" state. 2. **Low Gate Charge:** Allows for faster switching speeds, reducing switching losses. 3. **High Power Density:** The PDFN package allows for better heat dissipation compared to traditional leaded packages. --- ### ## Common Applications The M3H67FCG-R is typically found in circuits where efficiency and small size are critical: * **DC-DC Converters:** Used in point-of-load (POL) modules for motherboards and servers. * **Battery Management Systems (BMS):** Ideal for protection circuits due to low heat generation. * **Motor Drivers:** High current handling makes it suitable for small BLDC motor control. * **Synchronous Rectification:** Used in power supplies to replace diodes and improve overall efficiency. --- ### ## Pin Configuration (Standard PDFN33) ```text Top View +------------+ | 8 7 6 5 | <-- Drain (D) | | | 1 2 3 4 | <-- 1,2,3: Source (S) | 4: Gate (G) +------------+ ``` ---
    ✨ Follow-up Questions
    • ⤷What are the specific thermal resistance values for the M3H67FCG-R?
    • ⤷ Is there a P-Channel equivalent to this MOSFET for a complementary pair?
    • ⤷ How does the switching time of the M3H67FCG-R compare to standard TO-220 MOSFETs?