# 2SC3074 Silicon NPN Power Transistor

## Description

· Excellent hFE linearity
· Low collector-emitter saturation voltage
· Fast switching speed
· Complementary to 2SA1244

## Absolute Maximum Ratings (Ta=25℃)

SYMBOL	PARAMETER	VALUE	UNIT
VCBO	Collector-Base Voltage	60	V
VCEO	Collector-Emitter Voltage	50	V
VEBO	Emitter-Base Voltage	5	V
IC	Collector Current-Continuous	5	A
IB	Base Current-Continuous	1	A
PC	Collector Power Dissipation	1	W
PC @TC=25℃	Collector Power Dissipation	20	W
TJ	Junction Temperature	150	℃
Tstg	Storage Temperature Range	-55~150	℃

## Electrical Characteristics (Tc=25℃)

SYMBOL	PARAMETER	CONDITIONS	MIN	TYP.	MAX	UNIT
BVCEO	Collector-Emitter Breakdown Voltage	IC=10mA; IB=0	50	--	--	V
VCE(sat)	Collector-Emitter Saturation Voltage	IC=3A; IB=0.15A	--	200	400	mV
VBE(sat)	Base-Emitter Saturation Voltage	IC=3A; IB=0.15A	--	0.9	1.2	V
ICBO	Collector Cutoff Current	VCB=40V; IE=0	--	--	1.0	μA
IEBO	Emitter Cutoff Current	VEB=5V; IC=0	--	--	1.0	μA
hFE-1	DC Current Gain	IC=1A; VCE=1V	70	--	240
hFE-2	DC Current Gain	IC=3A; VCE=1V	30	--	--

## Classifications

Class	Class
70-140	120-240

## Disclaimer

· ISC reserves the right to change datasheet content without notification.
· Products are intended for general electronic equipment.
· Not designed for specialized quality/reliability equipment or hazardous environments.