# isc Silicon PNP Power Transistor 2SA1012

## Description
· Low Collector Saturation Voltage: VCE(sat) = -0.4V (Max) @ IC = -3A
· High Switching Speed
· Complement to Type 2SC2562

## Applications
· Designed for high current switching applications.

## Absolute Maximum Ratings (Ta=25℃)
· VCBO (Collector-Base Voltage): -60 V
· VCEO (Collector-Emitter Voltage): -50 V
· VEBO (Emitter-Base Voltage): -5 V
· IC (Collector Current-Continuous): -5 A
· PC (Total Power Dissipation): 25 W @ TC=25℃
· TJ (Junction Temperature): 150 ℃
· Tstg (Storage Temperature Range): -55~150 ℃

## Electrical Characteristics (TC=25℃ unless otherwise specified)
· V(BR)CEO (Collector-Emitter Breakdown Voltage): -50 V (IC= -10mA ; IB= 0)
· VCE(sat) (Collector-Emitter Saturation Voltage): -0.4 V (IC= -3A; IB= -0.15A)
· VBE(sat) (Base-Emitter Saturation Voltage): -1.2 V (IC= -3A; IB= -0.15A)
· ICBO (Collector Cutoff Current): -1 μA (VCB= -50V ; IE= 0)
· IEBO (Emitter Cutoff Current): -1 μA (VEB= -5V; IC= 0)
· hFE-1 (DC Current Gain): 70-240 (IC= -1A ; VCE= -1V)
· hFE-2 (DC Current Gain): 30 (IC= -3A ; VCE= -1V)
· fT (Current-Gain—Bandwidth Product): 60 MHz (IC= -1A ; VCE= -4V)
· COB (Output Capacitance): 170 pF (IE= 0; VCB= -10V; ftest= 1MHz)

## Switching Times
· ton (Turn-on Time): 0.1 μs (IC= -3A, RL= 10Ω, IB1=IB2= -0.15A, VCC= -30V)
· tstg (Storage Time): 1.0 μs
· tf (Fall Time): 0.1 μs (IC= -3A ,RL= 10Ω, IB1=IB2= -0.15A,VCC= -30V)

## hFE-1 Classifications
· O: 70-140
· Y: 120-240

## Website
· www.iscsemi.cn