2SA1012 datasheet(1/2 Pages) ISC

部品番号	2SA1012

部品情報	isc Silicon PNP Power Transistor

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メーカー	ISC [Inchange Semiconductor Company Limited]

ホームページ	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistor

2SA1012

DESCRIPTION

·Low Collector Saturation Voltage

:VCE(sat)= -0.4(V)(Max)@IC= -3A

·High Switching Speed

·Complement to Type 2SC2562

APPLICATIONS

·Designed for high current switching applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-60

V

VCEO

Collector-Emitter Voltage

-50

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-5

A

PC

Total Power Dissipation

@ TC=25℃

25

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

isc Website：www.iscsemi.cn

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