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Hello, Please ask a question about 2SPT6341SD Datasheet
# Example questions:
➢ Within what operating and storage temperature range can this device function without damage?
➢ What is the typical value for the current gain (hfe) when the collector current is 10a?
➢ What is the maximum continuous collector current this transistor can handle?
| Part No. | 2SPT6341SD |
| Manufacturer | SSDI |
| Size | 84 Kbytes |
| Pages | 2 pages |
| Description | MultiEpitaxial Planar NPN Power Transistor Die |
# 2SPT6341SD NPN Power Transistor Die
## Features
· Replacement for 2N6338 – 6341 series
· Die Size: 170 x 180 Mils
· Die Thickness: 260 – 330 µm
· Bonding Area:
- Emitter: 30 x 60 Mils
- Base: 40 x 50 Mils
· Recommended Wire Bonding:
- Emitter: Al (15 Mils Dia)
- Base: Al (15 Mils Dia)
· Metallization:
- Top: 60,000Å Al
- Bottom: 5,500Å Au / Cr / Ni / Au
## Maximum Ratings
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 125 | V |
| Collector-Base Voltage | VCBO | 180 | V |
| Emitter-Base Voltage | VEBO | 6 | V |
| Continuous Collector Current | IC | 25 | A |
| Peak Collector Current | IC max | 50 | A |
| Continuous Base Current | IB | 10 | A |
| Power Dissipation (TC=25ºC) | PD | 200 | W |
| Operating/Storage Temperature | Top/Tstg | -65 to +200 | ºC |
| Thermal Resistance (Junction to Case) | RθJC | 0.875 | ºC/W |
| Parameter | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage (IC=50mA) | BVCEO | 125 | 135 | - | V |
| Collector Cutoff Current (VCE=125V, VBE=1.5V) | ICEX | - | 0.020 | 10 | µA |
| Collector Cutoff Current (VCE=125V, VBE=1.5V, T=150ºC) | ICEX | - | - | 1 | mA |
| Collector Cutoff Current (VCB=180V) | ICBO1 | - | 0.020 | 10 | µA |
| Emitter Cutoff Current (VEB=6V) | IEBO | - | 0.001 | 100 | µA |
| DC Current Gain (VCE=2V, IC=500mA) | hFE1 | 50 | 120 | - | - |
| DC Current Gain (VCE=2V, IC=10A) | hFE2 | 30 | 185 | - | - |
| DC Current Gain (VCE=2V, IC=25A) | hFE3 | 12 | 120 | - | - |
| Collector-Emitter Saturation Voltage (IC=10A, IB=1A) | VCE(Sat) | - | 0.35 | 1.0 | V |
| Collector-Emitter Saturation Voltage (IC=25A, IB=2.5A) | VCE(Sat) | - | 0.93 | 1.8 | V |
| Base-Emitter Saturation Voltage (IC=10A, IB=1A) | VBE(Sat) | - | 1.13 | 1.8 | V |
| Base-Emitter Saturation Voltage (IC=25A, IB=2.5A) | VBE(Sat) | - | 1.73 | 2.5 | V |
| Parameter | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Current Gain Bandwidth | fT | 4 | 6.5 | - | MHz |
| Output Capacitance | cob | - | 220 | 300 | pF |
| Rise Time | tr | - | 60 | 300 | nsec |
| Storage Time | tS | - | 2000 | 2500 | nsec |
| Fall Time | tf | - | 110 | 250 | nsec |
# 2SPT6341SD NPN Power Transistor Die
## Features
· Replacement for 2N6338 – 6341 series
· Die Size: 170 x 180 Mils
· Die Thickness: 260 – 330 µm
· Bonding Area:
- Emitter: 30 x 60 Mils
- Base: 40 x 50 Mils
· Recommended Wire Bonding:
- Emitter: Al (15 Mils Dia)
- Base: Al (15 Mils Dia)
· Metallization:
- Top: 60,000Å Al
- Bottom: 5,500Å Au / Cr / Ni / Au
## Maximum Ratings
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 125 | V |
| Collector-Base Voltage | VCBO | 180 | V |
| Emitter-Base Voltage | VEBO | 6 | V |
| Continuous Collector Current | IC | 25 | A |
| Peak Collector Current | IC max | 50 | A |
| Continuous Base Current | IB | 10 | A |
| Power Dissipation (TC=25ºC) | PD | 200 | W |
| Operating/Storage Temperature | Top/Tstg | -65 to +200 | ºC |
| Thermal Resistance (Junction to Case) | RθJC | 0.875 | ºC/W |
| Parameter | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage (IC=50mA) | BVCEO | 125 | 135 | - | V |
| Collector Cutoff Current (VCE=125V, VBE=1.5V) | ICEX | - | 0.020 | 10 | µA |
| Collector Cutoff Current (VCE=125V, VBE=1.5V, T=150ºC) | ICEX | - | - | 1 | mA |
| Collector Cutoff Current (VCB=180V) | ICBO1 | - | 0.020 | 10 | µA |
| Emitter Cutoff Current (VEB=6V) | IEBO | - | 0.001 | 100 | µA |
| DC Current Gain (VCE=2V, IC=500mA) | hFE1 | 50 | 120 | - | - |
| DC Current Gain (VCE=2V, IC=10A) | hFE2 | 30 | 185 | - | - |
| DC Current Gain (VCE=2V, IC=25A) | hFE3 | 12 | 120 | - | - |
| Collector-Emitter Saturation Voltage (IC=10A, IB=1A) | VCE(Sat) | - | 0.35 | 1.0 | V |
| Collector-Emitter Saturation Voltage (IC=25A, IB=2.5A) | VCE(Sat) | - | 0.93 | 1.8 | V |
| Base-Emitter Saturation Voltage (IC=10A, IB=1A) | VBE(Sat) | - | 1.13 | 1.8 | V |
| Base-Emitter Saturation Voltage (IC=25A, IB=2.5A) | VBE(Sat) | - | 1.73 | 2.5 | V |
| Parameter | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Current Gain Bandwidth | fT | 4 | 6.5 | - | MHz |
| Output Capacitance | cob | - | 220 | 300 | pF |
| Rise Time | tr | - | 60 | 300 | nsec |
| Storage Time | tS | - | 2000 | 2500 | nsec |
| Fall Time | tf | - | 110 | 250 | nsec |
| Part No. | 2SPT6341SD |
| Manufacturer | SSDI |
| Size | 84 Kbytes |
| Pages | 2 pages |
| Description | MultiEpitaxial Planar NPN Power Transistor Die |
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