2SPT6341SD datasheet(1/2 Pages) SSDI

部品番号	2SPT6341SD

部品情報	MultiEpitaxial Planar NPN Power Transistor Die

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メーカー	SSDI [Solid States Devices, Inc]

ホームページ	http://www.ssdi-power.com

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NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: TR0101A

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Solid State Devices, Inc.

14830 Valley View Blvd * La Mirada, Ca 90638

Phone: (562) 404-7855 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

DESIGNER’S DATA SHEET

.180

.170

E

B

.011

2SPT6341SD

MultiEpitaxial Planar

NPN Power Transistor Die

Features:

• Recommended replacement for the 2N6338 – 6341 series

• Die Size: 170 x 180 Mils

• Die Thickness: 260 – 330 µm

• Bonding Area:

Emitter: 30 x 60 Mils

Base:

40 x 50 Mils

• Maximum Recommended Wire Bonding:

Emitter: Al (15 Mils Dia)

Base:

Al (15 Mils Dia)

• Metallization:

Top:

60,000Å Al

Bottom: 5,500Å Au / Cr / Ni / Au

Maximum Ratings

4/

Symbol

Value

Units

Collector – Emitter Voltage

VCEO

125

Volts

Collector – Base Voltage

VCBO

180

Volts

Emitter – Base Voltage

VEBO

6

Volts

Continuous Collector Current

Peak Collector Current

IC

IC max

25

50

Amps

Continuous Base Current

IB

10

Amps

Power Dissipation @ TC = 25ºC

Derate above 25ºC

PD

200

1.143

W

W/ºC

Operating & Storage Temperature

Top & Tstg

-65 to +200

ºC

Maximum Thermal Resistance

Junction to Case

RθJC

0.875

ºC/W

Electrical Characteristic

4/

Symbol

Min

Typ

Max

Units

Collector – Emitter

Breakdown Voltage

IC = 50mA

BVCEO

3/

125

135

––

Volts

Collector – Cutoff Current

VCE = 125 V; VBE = 1.5 V

VCE = 125 V; VBE = 1.5 V; T= 150ºC

ICEX

3/

––

0.020

—

10

1

µA

mA

Collector – Cutoff Current

VCB = 180 V

ICBO1

3/

––

0.020

10

uA

Emitter – Cutoff Current

VEB = 6 V

IEBO

3/

––

0.001

100

uA

DC Current Gain *

VCE = 2V, IC = 500mA

VCE = 2V, IC = 10A

VCE = 2V, IC = 25A

hFE1

3/

hFE2

3/

hFE3

50

30

12

120

185

120

––

220

––

Collector – Emitter Saturation

Voltage*

IC = 10A, IB = 1 A

IC = 25A, IB = 2.5A

VCE(Sat)

––

0.35

0.93

1.0

1.8

Volts

Base – Emitter Saturation

Voltage *

IC = 10A, IB = 1A

IC = 25A, IB = 2.5A

VBE(Sat)

––

1.13

1.73

1.8

2.5

Volts

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