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Hello, Please ask a question about 2SC1971 Datasheet
# Example questions:
➢ Which hfe classification range would a transistor with a dc current gain of 40 fall into?
➢ How does the thermal resistance, junction-to-ambient (rth j-a), affect the transistor's operating temperature?
➢ What is the maximum collector current (ic) this transistor can handle?
# 2SC1971 Silicon NPN Power Transistor
## Description
· High Power Gain: Gpe ≥ 10dB, f= 175MHz, Po= 6W, Vcc = 13.5V
· High Reliability
· Designed for VHF band mobile radio RF power amplifiers
## Absolute Maximum Ratings (Ta=25°C)
· VCBO: 35V
· VCEO: 17V
· VEBO: 4V
· IC: 2A
· PC (at TC=25°C): 12.5W
· PC (at Ta=25°C): 1.5W
· Tj: 150°C
· Tstg: -55~150°C
## Thermal Characteristics
· Rth j-a: 83 °C/W
· Rth j-c: 10 °C/W
## Electrical Characteristics (TC=25°C)
· V(BR)CBO: 35V
· V(BR)CEO: 17V
· V(BR)EBO: 4V
· ICBO: ≤ 0.5mA
· IEBO: ≤ 0.5mA
· hFE (DC Current Gain): 10-180
· Po (Output Power): 6-7W
· ηC (Collector Efficiency): 60-70%
## hFE Classifications
· X: 10-25
· A: 20-45
· B: 35-70
· C: 55-110
· D: 90-180
## Website
· www.iscsemi.cn
# 2SC1971 Silicon NPN Power Transistor
## Description
· High Power Gain: Gpe ≥ 10dB, f= 175MHz, Po= 6W, Vcc = 13.5V
· High Reliability
· Designed for VHF band mobile radio RF power amplifiers
## Absolute Maximum Ratings (Ta=25°C)
· VCBO: 35V
· VCEO: 17V
· VEBO: 4V
· IC: 2A
· PC (at TC=25°C): 12.5W
· PC (at Ta=25°C): 1.5W
· Tj: 150°C
· Tstg: -55~150°C
## Thermal Characteristics
· Rth j-a: 83 °C/W
· Rth j-c: 10 °C/W
## Electrical Characteristics (TC=25°C)
· V(BR)CBO: 35V
· V(BR)CEO: 17V
· V(BR)EBO: 4V
· ICBO: ≤ 0.5mA
· IEBO: ≤ 0.5mA
· hFE (DC Current Gain): 10-180
· Po (Output Power): 6-7W
· ηC (Collector Efficiency): 60-70%
## hFE Classifications
· X: 10-25
· A: 20-45
· B: 35-70
· C: 55-110
· D: 90-180
## Website
· www.iscsemi.cn
| Part No. | 2SC1971 |
| Manufacturer | ISC |
| Size | 219 Kbytes |
| Pages | 2 pages |
| Description | isc Silicon NPN Power Transistor |
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