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2SC1971 データシート(PDF) 1 Page - Inchange Semiconductor Company Limited

部品番号 2SC1971
部品情報  isc Silicon NPN Power Transistor
PDF  2 Pages
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メーカー  ISC [Inchange Semiconductor Company Limited]
ホームページ  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SC1971 データシート(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC1971
isc Website：www.iscsemi.cn
DESCRIPTION
·High Power Gain-
: Gpe≥ 10dB,f= 175MHz, PO= 6W; VCC= 13.5V
·High Reliability
APPLICATIONS
·Designed for RF power amplifiers on VHF band mobile radio
applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
35
V
VCEO
Collector-Emitter Voltage RBE= ∞
17
V
VEBO
Emitter-Base Voltage
4
V
IC
Collector Current
2
A
Collector Power Dissipation
@TC=25℃
12.5
PC
Collector Power Dissipation
@Ta=25℃
1.5
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-a
Thermal Resistance,Junction to Ambient
83
℃/W
Rth j-c
Thermal Resistance,Junction to Case
10
℃/W


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