# isc Silicon NPN Power Transistor 2SC4848

## Description

· Low Collector Saturation Voltage: VCE(sat) = 0.6V (Max) @ IC = 5A
· Collector-Emitter Breakdown Voltage: V(BR)CEO = 120V (Min)
· High Switching Speed
· Wide Area of Safe Operation

## Applications

· Power amplifier and general purpose applications

## Absolute Maximum Ratings (Ta = 25°C)

Symbol	Parameter	Value	Unit
VCBO	Collector-Base Voltage	250	V
VCEO	Collector-Emitter Voltage	120	V
VEBO	Emitter-Base Voltage	12	V
IC	Collector Current (Continuous)	7	A
ICM	Collector Current (Pulse)	15	A
PC	Collector Power Dissipation (@ Ta=25°C)	2	W
PC	Collector Power Dissipation (@ TC=25°C)	40	W
TJ	Junction Temperature	150	°C
Tstg	Storage Temperature Range	-55 to 150	°C

## Electrical Characteristics (Tc = 25°C unless noted)

Symbol	Parameter	Conditions	Min	Typ	Max	Unit
VCEX(SUS)	Collector-Emitter Breakdown Voltage	ICP=8A, IB1=IB2=0.5A, IC=5A, L=200μH, clamped	125			V
VCE(sat)	Collector-Emitter Saturation Voltage	IC=5A, IB=0.5A			0.6	V
VBE(sat)	Base-Emitter Saturation Voltage	IC=5A, IB=0.5A			1.2	V
ICBO	Collector Cutoff Current	VCB=100V, IE=0			10	μA
ICEO	Collector Cutoff Current	VCE=100V, IB=0, Ta=125°C			2.0	mA
IEBO	Emitter Cutoff Current	VEB=12V, IC=0			10	μA
hFE	DC Current Gain	IC=3A, VCE=5V	100		200
fT	Current-Gain—Bandwidth Product	IE=-0.5A, VCE=10V		20		MHz
COB	Output Capacitance	IE=0, VCB=10V, ftest=1.0MHz		150		pF

## Switching Times

Parameter	Condition	Value	Unit
ton	Turn-on Time	IC=5A, IB1=IB2=0.5A, RL=10Ω, VCC≈50V	0.5	μs
tstg	Storage Time		2.5	μs
tf	Fall Time	IC=5A, IB1=IB2=0.5A, RL=10Ω, VCC≈50V	0.5	μs

## Website

· www.iscsemi.cn