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2SC4848 データシート(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SC4848 データシート(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4848 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.6V(Max)@ IC= 5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for power amplifier and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 12 V IC Collector Current-Continuous 7 A ICM Collector Current-Pulse 15 A Collector Power Dissipation @ Ta=25℃ 2 PC Collector Power Dissipation @ TC=25℃ 40 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website:www.iscsemi.cn |
同様の部品番号 - 2SC4848 |
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同様の説明 - 2SC4848 |
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