# IRL 80 A - GaAs Infrared Emitter

## Features
· Type: GaAs infrared emitting diode
· Package: Clear plastic, lateral emission
· Cost: Low cost
· Stability: Long term
· Beam Angle: Wide (± 30°)
· Compatibility: Matches phototransistor LPT 80 A

## Applications
· Manufacturing and monitoring (beam interruption)
· Light barriers

## Ordering Information
· Type: IRL 80 A
· Ordering Code: Q68000-A7851

## Maximum Ratings (TA = 25°C)
· Operating/Storage Temperature: -40 to +100 °C

· Soldering Temperature: 240 °C (≥ 0.15 cm from case, 5s)
· Reverse Voltage: 3 V
· Forward Current: 60 mA
· Power Dissipation: 100 mW
· Power Dissipation Derate (TA > 25°C): 1.33 mW/°C
· Thermal Resistance: 750 K/W

## Characteristics (TA = 25°C)
· Peak Emission Wavelength: 950 nm
· Spectral Bandwidth (50% Imax): ± 20 nm
· Half Angle: ± 30 degrees
· Forward Voltage (IF = 20 mA): ≤ 1.5 V
· Radiant Intensity (IF = 20 mA): ≥ 0.4 mW/sr

## Notes
· Measurement performed with 1 cm² silicon detector aligned with mechanical axis, using an aperture.