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Hello, Please ask a question about KSMB3N60 Datasheet
# Example questions:
➢ What is the maximum junction temperature (tj) that this mosfet can withstand?
➢ What is the maximum allowable drain current when the device is operating at a case temperature of 100°c?
➢ What is the typical value of the gate-source threshold voltage (vgs(th))?
# KSMB3N60/FQB3N60 N-Channel MOSFET
## Description
N-channel MOSFET utilizing advanced trench technology for low gate charge and excellent RDS(on). Suitable for a wide variety of applications.
## Features
· Low gate charge
· Advanced trench technology for ultra RDS(ON)
· Excellent package for heat dissipation
## Absolute Maximum Ratings
· VDS (Drain-Source Voltage): 600 V
· VGS (Gate-Source Voltage): ±20 V
· ID (Continuous Drain Current): 3.0 A @ 25°C, 1.9 A @ 100°C
· Pulsed Drain Current: 12 A
· Power Dissipation: 75 W
· Operating/Storage Junction Temperature: -55°C to +150°C
## Electrical Characteristics
· BVDSS (Drain-Source Breakdown Voltage): 600 V
· RDS(ON) (Drain-Source On Resistance): 2.8 - 3.5 Ω @ VDS=10V, ID=6A
· VGS(th) (Gate-Source Threshold Voltage): 3.0 - 5.0 V
· Input Capacitance (Ciss): ~350 - 450 pF
· Total Gate Charge (Qg): ~10 - 13 nC
## Thermal Characteristics
· RƟJC (Junction-to-Case Thermal Resistance): 1.67 °C/W
· RƟJA (Junction-to-Ambient Thermal Resistance): 62.5 °C/W
## Ordering Information
· Part NO: KSMB3N60
· Marking: KSMB3N60
· Package: TO-263
## Package Marking
· Part NO: KSMB3N60
· Marking: KSMB3N60
· Package: TO-263
# KSMB3N60/FQB3N60 N-Channel MOSFET
## Description
N-channel MOSFET utilizing advanced trench technology for low gate charge and excellent RDS(on). Suitable for a wide variety of applications.
## Features
· Low gate charge
· Advanced trench technology for ultra RDS(ON)
· Excellent package for heat dissipation
## Absolute Maximum Ratings
· VDS (Drain-Source Voltage): 600 V
· VGS (Gate-Source Voltage): ±20 V
· ID (Continuous Drain Current): 3.0 A @ 25°C, 1.9 A @ 100°C
· Pulsed Drain Current: 12 A
· Power Dissipation: 75 W
· Operating/Storage Junction Temperature: -55°C to +150°C
## Electrical Characteristics
· BVDSS (Drain-Source Breakdown Voltage): 600 V
· RDS(ON) (Drain-Source On Resistance): 2.8 - 3.5 Ω @ VDS=10V, ID=6A
· VGS(th) (Gate-Source Threshold Voltage): 3.0 - 5.0 V
· Input Capacitance (Ciss): ~350 - 450 pF
· Total Gate Charge (Qg): ~10 - 13 nC
## Thermal Characteristics
· RƟJC (Junction-to-Case Thermal Resistance): 1.67 °C/W
· RƟJA (Junction-to-Ambient Thermal Resistance): 62.5 °C/W
## Ordering Information
· Part NO: KSMB3N60
· Marking: KSMB3N60
· Package: TO-263
## Package Marking
· Part NO: KSMB3N60
· Marking: KSMB3N60
· Package: TO-263
| Part No. | KSMB3N60 |
| Manufacturer | KERSEMI |
| Size | 660 Kbytes |
| Pages | 4 pages |
| Description | This N-channel MOSFETS use advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. |
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