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KSMB3N60 Datasheet with Chat AI
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  • Part No.KSMB3N60
    ManufacturerKERSEMI
    Size660 Kbytes
    Pages4 pages
    DescriptionThis N-channel MOSFETS use advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
    Datasheet Summary with AI

    # KSMB3N60/FQB3N60 N-Channel MOSFET

    ## Description
    N-channel MOSFET utilizing advanced trench technology for low gate charge and excellent RDS(on). Suitable for a wide variety of applications.

    ## Features
    · Low gate charge
    · Advanced trench technology for ultra RDS(ON)
    · Excellent package for heat dissipation

    ## Absolute Maximum Ratings
    · VDS (Drain-Source Voltage): 600 V
    · VGS (Gate-Source Voltage): ±20 V
    · ID (Continuous Drain Current): 3.0 A @ 25°C, 1.9 A @ 100°C
    · Pulsed Drain Current: 12 A
    · Power Dissipation: 75 W
    · Operating/Storage Junction Temperature: -55°C to +150°C

    ## Electrical Characteristics
    · BVDSS (Drain-Source Breakdown Voltage): 600 V

    · RDS(ON) (Drain-Source On Resistance): 2.8 - 3.5 Ω @ VDS=10V, ID=6A
    · VGS(th) (Gate-Source Threshold Voltage): 3.0 - 5.0 V
    · Input Capacitance (Ciss): ~350 - 450 pF
    · Total Gate Charge (Qg): ~10 - 13 nC

    ## Thermal Characteristics
    · RƟJC (Junction-to-Case Thermal Resistance): 1.67 °C/W
    · RƟJA (Junction-to-Ambient Thermal Resistance): 62.5 °C/W

    ## Ordering Information
    · Part NO: KSMB3N60
    · Marking: KSMB3N60
    · Package: TO-263

    ## Package Marking
    · Part NO: KSMB3N60
    · Marking: KSMB3N60
    · Package: TO-263

    # KSMB3N60/FQB3N60 N-Channel MOSFET

    ## Description
    N-channel MOSFET utilizing advanced trench technology for low gate charge and excellent RDS(on). Suitable for a wide variety of applications.

    ## Features
    · Low gate charge
    · Advanced trench technology for ultra RDS(ON)
    · Excellent package for heat dissipation

    ## Absolute Maximum Ratings
    · VDS (Drain-Source Voltage): 600 V
    · VGS (Gate-Source Voltage): ±20 V
    · ID (Continuous Drain Current): 3.0 A @ 25°C, 1.9 A @ 100°C
    · Pulsed Drain Current: 12 A
    · Power Dissipation: 75 W
    · Operating/Storage Junction Temperature: -55°C to +150°C

    ## Electrical Characteristics
    · BVDSS (Drain-Source Breakdown Voltage): 600 V
    · RDS(ON) (Drain-Source On Resistance): 2.8 - 3.5 Ω @ VDS=10V, ID=6A
    · VGS(th) (Gate-Source Threshold Voltage): 3.0 - 5.0 V
    · Input Capacitance (Ciss): ~350 - 450 pF
    · Total Gate Charge (Qg): ~10 - 13 nC

    ## Thermal Characteristics
    · RƟJC (Junction-to-Case Thermal Resistance): 1.67 °C/W
    · RƟJA (Junction-to-Ambient Thermal Resistance): 62.5 °C/W

    ## Ordering Information
    · Part NO: KSMB3N60
    · Marking: KSMB3N60
    · Package: TO-263

    ## Package Marking
    · Part NO: KSMB3N60
    · Marking: KSMB3N60
    · Package: TO-263

    Part No.KSMB3N60
    ManufacturerKERSEMI
    Size660 Kbytes
    Pages4 pages
    DescriptionThis N-channel MOSFETS use advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
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