KSMB3N60 datasheet(1/4 Pages) KERSEMI

部品番号	KSMB3N60

部品情報	This N-channel MOSFETS use advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.

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メーカー	KERSEMI [Kersemi Electronic Co., Ltd.]

ホームページ	http://www.kersemi.com

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KSMB3N60/FQB3N60

KERSMI ELECTRONIC CO.,LTD.

www.kersemi.com

1

Description

This N-channel MOSFETS use advanced trench technology and design to provide

excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.

Features

1) Low gate charge.

2) Green device available.

3) Advanced high cell denity trench technology for ultra RDS(ON)

4) Excellent package for good heat dissipation.

TO-263

Absolute Maximum Ratings TC=25℃,unless otherwise noted

Symbol

Parameter

Ratings

Units

VDS

Drain-Source Voltage

600

V

VGS

Gate-Source Voltage

±20

V

ID

Continuous Drain Current-1

3.0

A

Continuous Drain Current-T=100℃

1.9

Pulsed Drain Current2

12

EAS

Single Pulse Avalanche Energy3

200

mJ

PD

Power Dissipation4

75

W

TJ, TSTG

Operating and Storage Junction Temperature

Range

-55 to

+150

℃

Thermal Characteristics

BVDSS

RDSON

ID

600V

3.5Ω

3A

同様の部品番号 - KSMB3N60

メーカー	部品番号	データシート	部品情報
Kersemi Electronic Co.,...	KSMB3N80	760Kb / 4P	Green device available.

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