# KSMB2N60 - 600V N-channel MOSFET

## Description

This N-channel MOSFET uses trench technology for excellent RDS(on) and low gate charge, suitable for various applications.

Features:

· Low gate charge
· Green device available
· Advanced high-density trench technology for ultra RDS(ON)
· Package for good heat dissipation
· TO-263 package

## Absolute Maximum Ratings (TC=25℃)

Parameter	Rating	Unit
VDS	600	V
VGS	±20	V
ID (Continuous, 1)	2	A
ID (Continuous, 100℃)	1.5	A
ID (Pulsed)	9.6	A
EAS (Single Pulse)	140	mJ
PD	64	W
TJ, TSTG (Operating & Storage Junction Temp)	-55 to +150	℃

## Thermal Characteristics

Parameter	Rating	Unit
RƟJC (Junction to Case)	1.95	℃/W
RƟJA (Junction to Ambient)	62.5	℃/W

## Package Marking & Ordering

Part NO.	Marking	Package
KSMB2N60	KSMB2N60	TO-263

## Electrical Characteristics (TC=25℃)

Off Characteristics:

· BVDSS (Drain-Source Breakdown Voltage): 600V
· IDSS (Zero Gate Voltage Drain Current): ≤10 μA
· IGSS (Gate-Source Leakage Current): ≤±100 nA

On Characteristics:

· VGS(th) (Gate-Source Threshold Voltage): 3.0 - 5.0 V
· RDS(ON) (Drain-Source On Resistance): 3.7 - 4.2 Ω (VDS=10V, ID=6A)
· GFS (Forward Transconductance): 2.45 S (VDS=5V, ID=12A)

Dynamic Characteristics:

· Ciss (Input Capacitance): 270 - 350 pF (VDS=15V, VGS=0V, f=1MHz)
· Coss (Output Capacitance): 40 - 50 pF
· Crss (Reverse Transfer Capacitance): 5 - 7 pF

Switching Characteristics:

· td(on) (Turn-On Delay Time): 10 - 30 ns
· tr (Rise Time): 25 - 60 ns
· td(off) (Turn-Off Delay Time): 20 - 50 ns
· tf (Fall Time): 25 - 60 ns
· Qg (Total Gate Charge): 9.0 - 11 nC

Drain-Source Diode Characteristics:

· VSD (Source-Drain Forward Voltage): ≤1.4 V (VGS=0V, IS=1A)
· trr (Reverse Recovery Time): ≤180 ns
· Qrr (Reverse Recovery Charge): ≤0.72 nC

## Notes

· Data tested on a 1 inch² FR-4 board with 2OZ copper.
· Data tested with pulse width ≤300us, duty cycle ≤2%.
· EAS data shows maximum rating (VDD=25v, VGS=10V, L=0.1mH, iAS=17.8A).
· Power dissipation limited by 150℃ junction temperature.