KSMB2N60 datasheet(2/4 Pages) KERSEMI

2 / 4 page

KSMB2N60

KERSMI ELECTRONIC CO.,LTD.

www.kersemi.com

Package Marking and Ordering Information

Part NO.

Marking

Package

KSMB2N60

TO-263

Electrical Characteristics TC=25℃ unless otherwise noted

Symbol

Parameter

Conditions

Min

Typ

Max

Units

Off Characteristics

BVDSS

Drain-Sourtce Breakdown Voltage

VDS=0V,ID=250μA

600

—

IDSS

Zero Gate Voltage Drain Current

VDS=0V, VDS=32V

—

μA

IGSS

Gate-Source Leakage Current

VDS=±20V, VDS=0A

—

±100

On Characteristics

VGS(th)

GATE-Source Threshold Voltage

VDS=VDS, ID=250μA

3.0

—

5.0

RDS(ON)

Drain-Source On Resistance²

VDS=10V,ID=6A

—

3.7

4.2

VDS=2.5V,ID=5A

—

---

GFS

Forward Transconductance

VDS=5V,ID=12A

—

2.45

—

Dynamic Characteristics

Ciss

Input Capacitance

VDS=15V,VGS=0V,

f=1MHz

—

270

350

Coss

Output Capacitance

—

Crss

Reverse Transfer Capacitance

—

Switching Characteristics

td(on)

Turn-On Delay Time

VDS=20V,

VGS=10V,RGEN=3.3Ω

—

Rise Time

—

td(off)

Turn-Off Delay Time

—

Fall Time

—

Total Gate Charge

VGS=4.5V, VDS=20V,

ID=6A

—

9.0

Qgs

Gate-Source Charge

—

1.6

—

Qgd

Gate-Drain “Miller” Charge

—

4.3

—

Drain-Source Diode Characteristics

VSD

Source-Drain Diode ForwardVoltage²

VGS=0V,IS =1A

—

1.4

trr

Reverse Recovery Time

IF=7A,di/dt=100A/μS

—

180

—

Qrr

Reverse Recovery Charge

—

0.72

—

Notes:

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