Description
The TC55VEM416AXBN is a 16,777,216-bit static random access memory (SRAM) organized as 1,048,576 words by 16 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.3 to 3.6 V power supply. Advanced circuit technology provides both high speed and low power at an operating current of 3 mA/MHz and a minimum cycle time of 55 ns. It is automatically placed in low-power mode at 0.9 µA standby current (at VDD = 3 V, Ta = 25°C, typical) when chip enable (CE1 ) is asserted high or (CE2) is asserted low. There are three control inputs. CE1 and CE2 are used to select the device and for data retention control, and output enable ( OE ) provides fast memory access. Data byte control pin ( LB , UB ) provides lower and upper byte access. This device is well suited to various microprocessor system applications where high speed, low power and battery backup are required. And, with a guaranteed operating extreme temperature range of −40° to 85°C, the TC55VEM416AXBN can be used in environments exhibiting extreme temperature conditions. The TC55VEM416AXBN is available in a plastic 48-ball BGA.

Features
■ Low-power dissipation
■ Operating: 9 mW/MHz (typical)
■ Single power supply voltage of 2.3 to 3.6 V
■ Power down features usingCE1 and CE2
■ Data retention supply voltage of 1.5 to 3.6 V
■ Direct TTL compatibility for all inputs and outputs
■ Wide operating temperature range of −40° to 85°C
■ Standby Current (maximum): 3.6 V 15 µA 3.0 V 8 µA