Description The IRF6602 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance charge product in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%. ● Application Specific MOSFETs ● Ideal for CPU Core DC-DC Converters ● Low Conduction Losses ● Low Switching Losses ● Low Profile (<0.7 mm) ● Dual Sided Cooling Compatible ● Compatible with existing Surface Mount Techniques
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