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CG2H40025F データシート (PDF) - Cree, Inc

CG2H40025F Datasheet PDF - Cree, Inc
部品番号 CG2H40025F
ダウンロード  CG2H40025F ダウンロード
ファイルサイズ   1969.73 Kbytes
ページ   14 Pages
メーカー  CREE [Cree, Inc]
ホームページ  http://www.cree.com/
Logo CREE - Cree, Inc
部品情報 25 W, 28 V RF Power GaN HEMT

CG2H40025F Datasheet (PDF)

Go To PDF Page ダウンロード データシート
CG2H40025F Datasheet PDF - Cree, Inc

部品番号 CG2H40025F
ダウンロード  CG2H40025F Click to download

ファイルサイズ   1969.73 Kbytes
ページ   14 Pages
メーカー  CREE [Cree, Inc]
ホームページ  http://www.cree.com/
Logo CREE - Cree, Inc
部品情報 25 W, 28 V RF Power GaN HEMT

CG2H40025F データシート (HTML) - Cree, Inc




同様の部品番号 - CG2H40025F

メーカー部品番号データシート部品情報
logo
WOLFSPEED, INC.
CG2H40025 WOLFSPEED-CG2H40025 Datasheet
3Mb / 14P
25 W, 28 V RF Power GaN HEMT
Rev. 1.5, 2022-10-14
More results


同様の説明 - CG2H40025F

メーカー部品番号データシート部品情報
logo
Cree, Inc
CGH40025F CREE-CGH40025F Datasheet
1Mb / 12P
25 W, RF Power GaN HEMT
Rev 1.0
CGH40025 CREE-CGH40025 Datasheet
1Mb / 14P
25 W, RF Power GaN HEMT
Rev 4.0
CGH40090PP CREE-CGH40090PP Datasheet
1Mb / 13P
90 W, RF Power GaN HEMT
Rev 5.0
CGH40120F CREE-CGH40120F Datasheet
1Mb / 13P
120 W, RF Power GaN HEMT
Rev 3.0
CG2H30070F CREE-CG2H30070F Datasheet
1Mb / 13P
70 W, 0.5??.0 GHz, 28 V, RF Power GaN HEMT
logo
WOLFSPEED, INC.
CG2H30070F WOLFSPEED-CG2H30070F Datasheet
1Mb / 13P
70 W, DC - 4.0 GHz, 28 V, RF Power GaN HEMT
Rev 3.1 - April 2020
CG2H40025 WOLFSPEED-CG2H40025 Datasheet
3Mb / 14P
25 W, 28 V RF Power GaN HEMT
Rev. 1.5, 2022-10-14
CG2H40120F WOLFSPEED-CG2H40120F Datasheet
1Mb / 11P
120 W, 28 V, RF Power GaN HEMT
Rev. 2.0, 2022-6-28
CGH40025 WOLFSPEED-CGH40025 Datasheet
2Mb / 14P
25 W, RF Power GaN HEMT
Rev. 4.2, 2022-12-13
CGH40090PP WOLFSPEED-CGH40090PP Datasheet
1Mb / 13P
90 W, RF Power GaN HEMT
Rev 5.2 March 2020
More results




Cree, Inc について


Cree, Inc. is an American semiconductor company that specializes in the design and manufacture of wide bandgap semiconductors, including silicon carbide (SiC) and gallium nitride (GaN) devices, as well as LED lighting and power electronics products. The company was founded in 1987 and is headquartered in Durham, North Carolina.

Cree's wide bandgap semiconductors are used in a variety of applications, including power electronics, automotive, aerospace, and defense. The company's SiC and GaN devices are known for their high efficiency, high power density, and high operating temperature, making them ideal for use in applications where high performance is critical.

In addition to its wide bandgap semiconductor products, Cree also offers LED lighting products, including bulbs, fixtures, and chips, that are used in a variety of applications, including residential, commercial, and industrial lighting. Cree's LED lighting products are known for their high quality, energy efficiency, and long lifespan.

Cree has a strong focus on innovation and research and development, and is committed to developing new and innovative products that meet the evolving needs of its customers. The company has a global presence, with offices and facilities located in the United States, Europe, and Asia, and serves customers in more than 100 countries worldwide.

*この情報はあくまでも一般的な情報であり、上記の情報によって生じたいかなる損失や損害についても責任を負うものではありません。




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