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C2M0080170P データシート (PDF) - Cree, Inc

C2M0080170P Datasheet PDF - Cree, Inc
部品番号 C2M0080170P
ダウンロード  C2M0080170P ダウンロード
ファイルサイズ   1140.11 Kbytes
ページ   10 Pages
メーカー  CREE [Cree, Inc]
ホームページ  http://www.cree.com/
Logo CREE - Cree, Inc
部品情報 Silicon Carbide Power MOSFET C2M MOSFET Technology

C2M0080170P Datasheet (PDF)

Go To PDF Page ダウンロード データシート
C2M0080170P Datasheet PDF - Cree, Inc

部品番号 C2M0080170P
ダウンロード  C2M0080170P Click to download

ファイルサイズ   1140.11 Kbytes
ページ   10 Pages
メーカー  CREE [Cree, Inc]
ホームページ  http://www.cree.com/
Logo CREE - Cree, Inc
部品情報 Silicon Carbide Power MOSFET C2M MOSFET Technology

C2M0080170P データシート (HTML) - Cree, Inc




同様の部品番号 - C2M0080170P

メーカー部品番号データシート部品情報
logo
Inchange Semiconductor ...
C2M0080170P ISC-C2M0080170P Datasheet
339Kb / 3P
SiC N-Channel MOSFET
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同様の説明 - C2M0080170P

メーカー部品番号データシート部品情報
logo
Cree, Inc
CPM2-1200-0025B CREE-CPM2-1200-0025B Datasheet
923Kb / 7P
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CPM2-1200-0040B CREE-CPM2-1200-0040B Datasheet
789Kb / 7P
Silicon Carbide Power MOSFET C2M MOSFET Technology
CPM2-1200-0160B CREE-CPM2-1200-0160B Datasheet
833Kb / 7P
Silicon Carbide Power MOSFET C2M MOSFET Technology
CPM2-1700-0045B CREE-CPM2-1700-0045B Datasheet
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C2M0045170P CREE-C2M0045170P Datasheet
1Mb / 10P
Silicon Carbide Power MOSFET C2M MOSFET Technology
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WOLFSPEED, INC.
C2M0025120D WOLFSPEED-C2M0025120D Datasheet
893Kb / 11P
Silicon Carbide Power MOSFET C2M TM MOSFET Technology N-Channel Enhancement Mode
Rev. 5, 04-2021
C2M0040120D WOLFSPEED-C2M0040120D Datasheet
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Silicon Carbide Power MOSFET C2M TM MOSFET Technology N-Channel Enhancement Mode
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Silicon Carbide Power MOSFET C2M TM MOSFET Technology N-Channel Enhancement Mode
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C2M0280120D WOLFSPEED-C2M0280120D Datasheet
789Kb / 11P
Silicon Carbide Power MOSFET C2M TM MOSFET Technology N-Channel Enhancement Mode
Rev. 3, 02-2021
CPM2-1200-0080A WOLFSPEED-CPM2-1200-0080A Datasheet
533Kb / 7P
Silicon Carbide Power MOSFET C2M TM MOSFET Technology N-Channel Enhancement Mode
Rev. 1, 09-2020
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Cree, Inc について


Cree, Inc. is an American semiconductor company that specializes in the design and manufacture of wide bandgap semiconductors, including silicon carbide (SiC) and gallium nitride (GaN) devices, as well as LED lighting and power electronics products. The company was founded in 1987 and is headquartered in Durham, North Carolina.

Cree's wide bandgap semiconductors are used in a variety of applications, including power electronics, automotive, aerospace, and defense. The company's SiC and GaN devices are known for their high efficiency, high power density, and high operating temperature, making them ideal for use in applications where high performance is critical.

In addition to its wide bandgap semiconductor products, Cree also offers LED lighting products, including bulbs, fixtures, and chips, that are used in a variety of applications, including residential, commercial, and industrial lighting. Cree's LED lighting products are known for their high quality, energy efficiency, and long lifespan.

Cree has a strong focus on innovation and research and development, and is committed to developing new and innovative products that meet the evolving needs of its customers. The company has a global presence, with offices and facilities located in the United States, Europe, and Asia, and serves customers in more than 100 countries worldwide.

*この情報はあくまでも一般的な情報であり、上記の情報によって生じたいかなる損失や損害についても責任を負うものではありません。




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