PXAC192908FV データシート(PDF) - Cree, Inc

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PXAC192908FV データシート (PDF) - Cree, Inc

PXAC192908FV Datasheet PDF - Cree, Inc


部品番号	PXAC192908FV

ダウンロード	PXAC192908FV ダウンロード

ファイルサイズ	525.67 Kbytes

ページ	9 Pages

メーカー	CREE [Cree, Inc]

ホームページ	http://www.cree.com/

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部品情報	Thermally-Enhanced High Power RF LDMOS FET 240 W, 28 V, 1930 ??1995 MHz

PXAC192908FV Datasheet (PDF)

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PXAC192908FV Datasheet PDF - Cree, Inc


部品番号	PXAC192908FV

ダウンロード	PXAC192908FV Click to download

ファイルサイズ	525.67 Kbytes

ページ	9 Pages

メーカー	CREE [Cree, Inc]

ホームページ	http://www.cree.com/

Logo

部品情報	Thermally-Enhanced High Power RF LDMOS FET 240 W, 28 V, 1930 ??1995 MHz

PXAC192908FV データシート (HTML) - Cree, Inc

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PXAC192908FV Datasheet HTML 9Page - Cree, Inc

同様の部品番号 - PXAC192908FV

メーカー	部品番号	データシート	部品情報
Infineon Technologies A...	PXAC192908FV	1Mb / 9P	Thermally-Enhanced High Power RF LDMOS FET Rev. 02.2, 2015-07-14
	PXAC192908FVV1R0	1Mb / 9P	Thermally-Enhanced High Power RF LDMOS FET 240 W, 28 V, 1930 ??1995 MHz Rev. 02.3, 2016-06-17
	PXAC192908FVV1R0XTMA1	1Mb / 9P	Thermally-Enhanced High Power RF LDMOS FET 240 W, 28 V, 1930 ??1995 MHz Rev. 02.3, 2016-06-17
	PXAC192908FVV1R250	1Mb / 9P	Thermally-Enhanced High Power RF LDMOS FET 240 W, 28 V, 1930 ??1995 MHz Rev. 02.3, 2016-06-17
	PXAC192908FVV1R250XTMA1	1Mb / 9P	Thermally-Enhanced High Power RF LDMOS FET 240 W, 28 V, 1930 ??1995 MHz Rev. 02.3, 2016-06-17

同様の説明 - PXAC192908FV

メーカー	部品番号	データシート	部品情報
Infineon Technologies A...	PTFA192401E	431Kb / 11P	Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 ??1990 MHz Rev. 02, 2009-04-01
	PTFB192503EL	673Kb / 15P	Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930-1990 MHz Rev. 09, 2010-11-09
	PXAC192908FV	1Mb / 9P	Thermally-Enhanced High Power RF LDMOS FET 240 W, 28 V, 1930 ??1995 MHz Rev. 02.3, 2016-06-17
	PTFC210202FC	655Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 ??2200 MHz Rev. 03.4, 2016-06-22
Cree, Inc	PXAC182908FV	515Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 240 W, 28 V, 1805 ??1880 MHz
	PTFB192503FL	531Kb / 14P	Thermally-Enhanced High Power RF LDMOS FET 240 W, 1930 ??1990 MHz
	PTFB193404F	610Kb / 14P	Thermally-Enhanced High Power RF LDMOS FET 340 W, 30 V, 1930 ??1990 MHz
	PTFC210202FC	700Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 - 2200 MHz
WOLFSPEED, INC.	PTFC210202FC-V1	828Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 – 2200 MHz Rev. 06, 2023-06-28
WOLFSPEED, INC.	PXAE261908NF	568Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 240 W, 28 V, 2515 – 2675 MHz Rev. 04. 2023-7-24

Cree, Inc について

Cree, Inc. is an American semiconductor company that specializes in the design and manufacture of wide bandgap semiconductors, including silicon carbide (SiC) and gallium nitride (GaN) devices, as well as LED lighting and power electronics products. The company was founded in 1987 and is headquartered in Durham, North Carolina.

Cree's wide bandgap semiconductors are used in a variety of applications, including power electronics, automotive, aerospace, and defense. The company's SiC and GaN devices are known for their high efficiency, high power density, and high operating temperature, making them ideal for use in applications where high performance is critical.

In addition to its wide bandgap semiconductor products, Cree also offers LED lighting products, including bulbs, fixtures, and chips, that are used in a variety of applications, including residential, commercial, and industrial lighting. Cree's LED lighting products are known for their high quality, energy efficiency, and long lifespan.

Cree has a strong focus on innovation and research and development, and is committed to developing new and innovative products that meet the evolving needs of its customers. The company has a global presence, with offices and facilities located in the United States, Europe, and Asia, and serves customers in more than 100 countries worldwide.

*この情報はあくまでも一般的な情報であり、上記の情報によって生じたいかなる損失や損害についても責任を負うものではありません。

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