PXAC260602FC データシート(PDF) - Cree, Inc

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PXAC260602FC データシート (PDF) - Cree, Inc

PXAC260602FC Datasheet PDF - Cree, Inc


部品番号	PXAC260602FC

ダウンロード	PXAC260602FC ダウンロード

ファイルサイズ	633.86 Kbytes

ページ	8 Pages

メーカー	CREE [Cree, Inc]

ホームページ	http://www.cree.com/

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部品情報	Thermally-Enhanced High Power RF LDMOS FET 60 W, P3dB 28 V, 2620 ??2690 MHz

PXAC260602FC Datasheet (PDF)

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PXAC260602FC Datasheet PDF - Cree, Inc


部品番号	PXAC260602FC

ダウンロード	PXAC260602FC Click to download

ファイルサイズ	633.86 Kbytes

ページ	8 Pages

メーカー	CREE [Cree, Inc]

ホームページ	http://www.cree.com/

Logo

部品情報	Thermally-Enhanced High Power RF LDMOS FET 60 W, P3dB 28 V, 2620 ??2690 MHz

PXAC260602FC データシート (HTML) - Cree, Inc

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同様の部品番号 - PXAC260602FC

メーカー	部品番号	データシート	部品情報
Infineon Technologies A...	PXAC260602FC	352Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET Rev. 02.2, 2014-05-14
	PXAC260602FCV1R0	551Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 60 W, P3dB @ 28 V, 2620 ??2690 MHz Rev. 02.4, 2016-06-22
	PXAC260602FCV1R0XTMA1	551Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 60 W, P3dB @ 28 V, 2620 ??2690 MHz Rev. 02.4, 2016-06-22
	PXAC260602FCV1R250	551Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 60 W, P3dB @ 28 V, 2620 ??2690 MHz Rev. 02.4, 2016-06-22
	PXAC260602FCV1R250XTMA1	551Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 60 W, P3dB @ 28 V, 2620 ??2690 MHz Rev. 02.4, 2016-06-22

同様の説明 - PXAC260602FC

メーカー	部品番号	データシート	部品情報
Infineon Technologies A...	PXAC260602FC	551Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 60 W, P3dB @ 28 V, 2620 ??2690 MHz Rev. 02.4, 2016-06-22
	PTFC262808SV	180Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 2620 ??2690 MHz Rev. 02.1, 2013-08-02
	PTFC262157FH	1Mb / 10P	Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2620 ??2690 MHz Rev. 03.1, 2016-06-21
	PTFC261402FC	231Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 2620 ??2690 MHz Rev. 05, 2016-06-21
	PTFC262808FV	1Mb / 8P	Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 2620 ??2690 MHz Rev. 03, 2016-06-22
Cree, Inc	PTAC260302FC	636Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 30 W, 28 V, 2620 ??2690 MHz
	PTFC261402FC	322Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 2620 ??2690 MHz
	PTFC262808FV	806Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 2620 ??2690 MHz
	PXAE263708NB	289Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 400 W (P3dB), 28 V, 2620 ??2690 MHz
WOLFSPEED, INC.	PXAE263708NB	612Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 400 W (P3dB), 28 V, 2620 – 2690 MHz Rev. 04, 2023-06-23

Cree, Inc について

Cree, Inc. is an American semiconductor company that specializes in the design and manufacture of wide bandgap semiconductors, including silicon carbide (SiC) and gallium nitride (GaN) devices, as well as LED lighting and power electronics products. The company was founded in 1987 and is headquartered in Durham, North Carolina.

Cree's wide bandgap semiconductors are used in a variety of applications, including power electronics, automotive, aerospace, and defense. The company's SiC and GaN devices are known for their high efficiency, high power density, and high operating temperature, making them ideal for use in applications where high performance is critical.

In addition to its wide bandgap semiconductor products, Cree also offers LED lighting products, including bulbs, fixtures, and chips, that are used in a variety of applications, including residential, commercial, and industrial lighting. Cree's LED lighting products are known for their high quality, energy efficiency, and long lifespan.

Cree has a strong focus on innovation and research and development, and is committed to developing new and innovative products that meet the evolving needs of its customers. The company has a global presence, with offices and facilities located in the United States, Europe, and Asia, and serves customers in more than 100 countries worldwide.

*この情報はあくまでも一般的な情報であり、上記の情報によって生じたいかなる損失や損害についても責任を負うものではありません。

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