PTFB093608FV データシート(PDF) - Cree, Inc

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PTFB093608FV データシート (PDF) - Cree, Inc

PTFB093608FV Datasheet PDF - Cree, Inc


部品番号	PTFB093608FV

ダウンロード	PTFB093608FV ダウンロード

ファイルサイズ	1116.02 Kbytes

ページ	13 Pages

メーカー	CREE [Cree, Inc]

ホームページ	http://www.cree.com/

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部品情報	Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 ??960 MHz

PTFB093608FV Datasheet (PDF)

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PTFB093608FV Datasheet PDF - Cree, Inc


部品番号	PTFB093608FV

ダウンロード	PTFB093608FV Click to download

ファイルサイズ	1116.02 Kbytes

ページ	13 Pages

メーカー	CREE [Cree, Inc]

ホームページ	http://www.cree.com/

Logo

部品情報	Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 ??960 MHz

PTFB093608FV データシート (HTML) - Cree, Inc

PTFB093608FV Datasheet HTML 1Page - Cree, Inc

PTFB093608FV Datasheet HTML 2Page - Cree, Inc

PTFB093608FV Datasheet HTML 3Page - Cree, Inc

PTFB093608FV Datasheet HTML 4Page - Cree, Inc

PTFB093608FV Datasheet HTML 5Page - Cree, Inc

PTFB093608FV Datasheet HTML 6Page - Cree, Inc

PTFB093608FV Datasheet HTML 7Page - Cree, Inc

PTFB093608FV Datasheet HTML 8Page - Cree, Inc

PTFB093608FV Datasheet HTML 9Page - Cree, Inc

PTFB093608FV Datasheet HTML 10Page - Cree, Inc

同様の部品番号 - PTFB093608FV

メーカー	部品番号	データシート	部品情報
Infineon Technologies A...	PTFB093608FV	1Mb / 13P	Thermally-Enhanced High Power RF LDMOS FET Rev. 04, 2012-07-24
	PTFB093608FVV2	1Mb / 13P	Thermally-Enhanced High Power RF LDMOS FET Rev. 04, 2012-07-24
	PTFB093608FVV2R250	1Mb / 13P	Thermally-Enhanced High Power RF LDMOS FET Rev. 04, 2012-07-24
	PTFB093608FVV2R250XTMA1	1Mb / 13P	Thermally-Enhanced High Power RF LDMOS FET Rev. 04, 2012-07-24
	PTFB093608FVV2XWSA1	1Mb / 13P	Thermally-Enhanced High Power RF LDMOS FET Rev. 04, 2012-07-24

同様の説明 - PTFB093608FV

メーカー	部品番号	データシート	部品情報
Infineon Technologies A...	PTFA091503EL	627Kb / 11P	Thermally-Enhanced High Power RF LDMOS FET 150 W, 920-960 MHz Rev. 03, 2010-08-11
	PTFB091507FH	1Mb / 13P	Thermally-Enhanced High Power RF LDMOS FET 160 W, 28 V, 920-960 MHz Rev. 03, 2011-03-14
	PTFB090901EA	226Kb / 14P	Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 . 960 MHz Rev. 04, 2012-02-23
	PTFB091802FC	1Mb / 9P	Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 920 ??960 MHz Rev. 02.1, 2016-06-10
	PTFB091507FH	1,015Kb / 13P	Thermally-Enhanced High Power RF LDMOS FET 160 W, 28 V, 920 ??960 MHz Rev. 03.1, 2016-06-09
	PTFA091503EL	766Kb / 11P	Thermally-Enhanced High Power RF LDMOS FET 150 W, 920 ??960 MHz Rev. 04, 2016-06-16
Cree, Inc	PTFB090901EA	710Kb / 14P	Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 ??960 MHz
	PTFB091507FH	618Kb / 13P	Thermally-Enhanced High Power RF LDMOS FET 160 W, 28 V, 920 ??960 MHz
	PTFB091802FC	538Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 920 ??960 MHz
WOLFSPEED, INC.	PTRA097008NB	556Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 630 W, 48 V, 920 – 960 MHz Rev. 04, 2023-06-22

Cree, Inc について

Cree, Inc. is an American semiconductor company that specializes in the design and manufacture of wide bandgap semiconductors, including silicon carbide (SiC) and gallium nitride (GaN) devices, as well as LED lighting and power electronics products. The company was founded in 1987 and is headquartered in Durham, North Carolina.

Cree's wide bandgap semiconductors are used in a variety of applications, including power electronics, automotive, aerospace, and defense. The company's SiC and GaN devices are known for their high efficiency, high power density, and high operating temperature, making them ideal for use in applications where high performance is critical.

In addition to its wide bandgap semiconductor products, Cree also offers LED lighting products, including bulbs, fixtures, and chips, that are used in a variety of applications, including residential, commercial, and industrial lighting. Cree's LED lighting products are known for their high quality, energy efficiency, and long lifespan.

Cree has a strong focus on innovation and research and development, and is committed to developing new and innovative products that meet the evolving needs of its customers. The company has a global presence, with offices and facilities located in the United States, Europe, and Asia, and serves customers in more than 100 countries worldwide.

*この情報はあくまでも一般的な情報であり、上記の情報によって生じたいかなる損失や損害についても責任を負うものではありません。

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