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GTRA262802FC-V2-R2 データシート (PDF) - Cree, Inc

GTRA262802FC-V2-R2 Datasheet PDF - Cree, Inc
部品番号 GTRA262802FC-V2-R2
ダウンロード  GTRA262802FC-V2-R2 ダウンロード
ファイルサイズ   497.05 Kbytes
ページ   9 Pages
メーカー  CREE [Cree, Inc]
ホームページ  http://www.cree.com/
Logo CREE - Cree, Inc
部品情報 Thermally-Enhanced High Power RF GaN on SiC HEMT 250 W, 48 V, 2490 ??2690 MHz

GTRA262802FC-V2-R2 Datasheet (PDF)

Go To PDF Page ダウンロード データシート
GTRA262802FC-V2-R2 Datasheet PDF - Cree, Inc

部品番号 GTRA262802FC-V2-R2
ダウンロード  GTRA262802FC-V2-R2 Click to download

ファイルサイズ   497.05 Kbytes
ページ   9 Pages
メーカー  CREE [Cree, Inc]
ホームページ  http://www.cree.com/
Logo CREE - Cree, Inc
部品情報 Thermally-Enhanced High Power RF GaN on SiC HEMT 250 W, 48 V, 2490 ??2690 MHz

GTRA262802FC-V2-R2 データシート (HTML) - Cree, Inc




同様の部品番号 - GTRA262802FC-V2-R2

メーカー部品番号データシート部品情報
logo
WOLFSPEED, INC.
GTRA262802FC-V2-R2 WOLFSPEED-GTRA262802FC-V2-R2 Datasheet
515Kb / 9P
Thermally-Enhanced High Power RF GaN on SiC HEMT 250 W, 48 V, 2490 – 2690 MHz
Rev. 03.3, 2022-1-27
More results


同様の説明 - GTRA262802FC-V2-R2

メーカー部品番号データシート部品情報
logo
Cree, Inc
GTVA263202FC CREE-GTVA263202FC Datasheet
458Kb / 8P
Thermally-Enhanced High Power RF GaN on SiC HEMT 340 W, 48 V, 2620 ??2690 MHz
GTRA263902FC CREE-GTRA263902FC Datasheet
486Kb / 8P
Thermally-Enhanced High Power RF GaN on SiC HEMT 370 W, 48 V, 2495 ??2690 MHz
GTVA261802FC CREE-GTVA261802FC Datasheet
495Kb / 8P
Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 48 V, 2620 ??2690 MHz
GTVA262701FA CREE-GTVA262701FA Datasheet
489Kb / 8P
Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 ??2690 MHz
GTVA262711FA CREE-GTVA262711FA Datasheet
464Kb / 9P
Thermally-Enhanced High Power RF GaN on SiC HEMT 300 W, 48 V, 2620 ??2690 MHz
logo
WOLFSPEED, INC.
GTVA262701FA_V2 WOLFSPEED-GTVA262701FA_V2 Datasheet
506Kb / 8P
Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 – 2690 MHz
Rev. 04.3, 2022-1-27
GTRA262802FC WOLFSPEED-GTRA262802FC Datasheet
515Kb / 9P
Thermally-Enhanced High Power RF GaN on SiC HEMT 250 W, 48 V, 2490 – 2690 MHz
Rev. 03.3, 2022-1-27
GTRA263902FC WOLFSPEED-GTRA263902FC Datasheet
531Kb / 8P
Thermally-Enhanced High Power RF GaN on SiC HEMT 370 W, 48 V, 2495 – 2690 MHz
Rev. 04.1, 2022-1-27
GTVA262701FA WOLFSPEED-GTVA262701FA Datasheet
506Kb / 8P
Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 – 2690 MHz
Rev. 04.3, 2022-1-27
GTVA263202FC WOLFSPEED-GTVA263202FC Datasheet
632Kb / 8P
Thermally-Enhanced High Power RF GaN on SiC HEMT 340 W, 48 V, 2620 – 2690 MHz
Rev. 04.1, 2022-1-27
More results




Cree, Inc について


Cree, Inc. is an American semiconductor company that specializes in the design and manufacture of wide bandgap semiconductors, including silicon carbide (SiC) and gallium nitride (GaN) devices, as well as LED lighting and power electronics products. The company was founded in 1987 and is headquartered in Durham, North Carolina.

Cree's wide bandgap semiconductors are used in a variety of applications, including power electronics, automotive, aerospace, and defense. The company's SiC and GaN devices are known for their high efficiency, high power density, and high operating temperature, making them ideal for use in applications where high performance is critical.

In addition to its wide bandgap semiconductor products, Cree also offers LED lighting products, including bulbs, fixtures, and chips, that are used in a variety of applications, including residential, commercial, and industrial lighting. Cree's LED lighting products are known for their high quality, energy efficiency, and long lifespan.

Cree has a strong focus on innovation and research and development, and is committed to developing new and innovative products that meet the evolving needs of its customers. The company has a global presence, with offices and facilities located in the United States, Europe, and Asia, and serves customers in more than 100 countries worldwide.

*この情報はあくまでも一般的な情報であり、上記の情報によって生じたいかなる損失や損害についても責任を負うものではありません。




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