PRODUCT DESCRIPTION
The SST39VF160Q/VF160 devices are 1M x 16 CMOS Multi-Purpose Flash (MPF) manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF160Q/VF160 write (Program or Erase) with a 2.7V-only power supply. The SST39VF160Q/VF160 conform to JEDEC standard pinouts for x16 memories.

FEATURES:
• Organized as 1 M X 16
• Single 2.7V-only Read and Write Operations
• VDDQ Power Supply to Support 5V I/O for SST39VF160Q
   - VDDQ not available on SST39VF160
• Superior Reliability
   - Endurance: 100,000 Cycles (typical)
   - Greater than 100 years Data Retention
• Low Power Consumption:
   - Active Current: 15 mA (typical)
   - Standby Current: 3 µA (typical)
   - Auto Low Power Mode: 3 µA (typical)
• Small Sector Erase Capability (512 sectors)
   - Uniform 2 KWord sectors
• Block Erase Capability (32 blocks)
   - Uniform 32 KWord blocks
• Fast Read Access Time:
   - 70 and 90 ns
• Latched Address and Data
• Fast Sector Erase and Word Program:
   - Sector Erase Time: 3 ms typical
   - Block Erase Time: 7 ms typical
   - Chip Erase Time: 15 ms typical
   - Word Program time: 7 µs typical
   - Chip Rewrite Time: 7 seconds
• Automatic Write Timing
   - Internal Vpp Generation
• End of Write Detection
   - Toggle Bit
   - Data# Polling
• CMOS I/O Compatibility
• JEDEC Standard
   - EEPROM Pinouts and command set
• Packages Available
   - 48-Pin TSOP (12mm x 20mm)
   - 6 x 8 Ball TFBGA