High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network

The MJE18002D2 use a newly developed technology, so called H2BIP*, to design the state of art transistor dedicated to the Electronic Light Ballast and PFC** circuit.
The main advantages brought by these new transistors are:

• Improved Global Efficiency Due to the Low Base Drive Requirements
• DC Current Gain Typically Centered at 45
• Extremely Low Storage Time Variation, Thanks to the Antisaturation Network
• Easy to Use Thanks to the Integrated Collector/Emitter Diode
   The ON Semiconductor Six Sigma philosophy provides tight and reproductible parameter distribution.
   * High speed High gain Bipolar transistor
   ** Power Factor Control