| メーカー | 部品番号 | データシート | 部品情報 |
 SHENZHEN DOINGTER SEMIC... |
MTA015C02Q8
|
2Mb / 9P |
N-Channel and P-Channel MOSFET uses advanced trench technology
|
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MTD120C10KQ8
|
2Mb / 7P |
N-Channel and P-Channel MOSFET uses advanced trench technology
|
|
RU30L15H
|
2Mb / 7P |
P-Channel MOSFET uses advanced trench technology
|
|
SM2001CSK
|
2Mb / 9P |
N-Channel and P-Channel MOSFET uses advanced trench technology
|
|
SM2221CSQG
|
1Mb / 7P |
N-Channel and P-Channel MOSFET uses advanced trench technology
|
|
SM4310PSK
|
1Mb / 4P |
P-Channel MOSFET uses advanced trench technology
|
|
SM4403PSK
|
1Mb / 4P |
P-Channel MOSFET uses advanced trench technology
|
|
SPP4435B
|
1Mb / 4P |
P-Channel MOSFET uses advanced trench technology
|
 Shenzhen Luguang Electr... |
3400
|
1Mb / 6P |
The 3400 uses advanced trench technology to provide excellent RDS(ON)
|
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3400L
|
1Mb / 6P |
The 3400L uses advanced trench technology to provide excellent RDS(ON)
|