Functional Description
The WCMB2016R4X is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current.
   
Features
• Low voltage range:
    — 1.65V−1.95V
• Ultra-low active power
    — Typical Active Current: 0.5 mA @ f = 1 MHz
    — Typical Active Current: 1.5 mA @ f = fmax
• Low standby power
• Easy memory expansion with CE and OE features
• Automatic power-down when deselected
• CMOS for optimum speed/power